參數資料
型號: 29LV800BT-70
廠商: Macronix International Co., Ltd.
英文描述: 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述: 800萬位[1Mx8/512K x16] CMOS單電壓3V時僅閃存
文件頁數: 18/63頁
文件大小: 765K
代理商: 29LV800BT-70
18
P/N:PM1062
MX29LV800BT/BB
REV. 1.3, DEC. 20, 2004
If this time-out condition occurs during sector erase op-
eration, it specifies that a particular sector is bad and it
may not be reused. However, other sectors are still func-
tional and may be used for the program or erase opera-
tion. The device must be reset to use other sectors.
Write the Reset command sequence to the device, and
then execute program or erase command sequence. This
allows the system to continue to use the other active
sectors in the device.
If this time-out condition occurs during the chip erase
operation, it specifies that the entire chip is bad or com-
bination of sectors are bad.
Status
Q7
Q6
Q5
Q3
Q2
RY/BY#
(Note1)
(Note2)
Byte Program in Auto Program Algorithm
Q7
Toggle
0
N/A
No
0
Toggle
Auto Erase Algorithm
0
Toggle
0
1
Toggle
0
Erase Suspend Read
(Erase Suspended Sector)
1
No
0
N/A Toggle
1
Toggle
In Progress
Erase Suspended Mode
Erase Suspend Read
(Non-Erase Suspended Sector)
Data
Data
Data
Data
Data
1
Erase Suspend Program
Q7
Toggle
0
N/A
N/A
0
Byte Program in Auto Program Algorithm
Q7
Toggle
1
N/A
No
0
Toggle
Exceeded
Time Limits Auto Erase Algorithm
0
Toggle
1
1
Toggle
0
Erase Suspend Program
Q7
Toggle
1
N/A
N/A
0
TABLE 8. WRITE OPERATION STATUS
Note:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.
See "Q5:Exceeded Timing Limits " for more information.
If this time-out condition occurs during the byte program-
ming operation, it specifies that the entire sector con-
taining that byte is bad and this sector may not be re-
used, (other sectors are still functional and can be re-
used).
The time-out condition will not appear if a user tries to
program a non blank location without erasing. Please
note that this is not a device failure condition since the
device was incorrectly used.
相關PDF資料
PDF描述
29LV800BT-90 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BE 8M (1M x 8/512 K x 16) BIT
29LV800TE 8M (1M x 8/512 K x 16) BIT
29PL256N 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
29PS 25PS, 42PS, 44PS, 45PS and 46PS Series Pressure Switches
相關代理商/技術參數
參數描述
29LV800BT-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800TE 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT
29M132 功能描述:工業(yè)移動感應器和位置傳感器 RESISTIVE & OPTICAL RoHS:否 制造商:Honeywell 輸出類型:Analog - Current 電壓額定值:12 VDC to 30 VDC 線性:+/- 0.0011 % 溫度范圍:- 40 C to + 85 C 總電阻: 容差: 類型:Rotary Sensor
29M30050R008BL 制造商:Micro Plastics Inc 功能描述:
29M426 制造商:Honeywell Sensing and Control 功能描述: