參數(shù)資料
型號： 2C3637KV
英文描述： BJT
中文描述： 雙極型晶體管
文件頁數(shù)： 2/3頁
文件大?。?/td> 43K
代理商： 2C3637KV
Due to the limitations of probe testing, only dc parameters are tested. This must be done with
pulse width less than 300 μs, duty cycle less than 2%.
Parameter
Test conditions
Min
Max
Unit
I
CBO1
Bias condition D; V
CB
= 175 V dc
---
10
μA dc
I
EBO1
V
EB
= 5 V dc
---
10
μA dc
V
(BR)CEO
Bias condition D; I
C
= 10 mA dc; pulsed
175
---
V dc
I
CBO2
Bias condition D; V
CB
= 100 V dc
---
100
nA dc
I
EBO2
Bias condition D; V
EB
= 3 V dc
---
50
nA dc
I
CEO
Bias condition D; V
CE
= 100 V dc
---
10
μA dc
h
FE1
V
CE
= 10 V dc; I
C
= 0.1 mA dc; pulsed
55
---
---
h
FE2
V
CE
= 10 V dc; I
C
= 1.0 mA dc; pulsed
90
---
---
h
FE3
V
CE
= 10 V dc; I
C
= 10 mA dc; pulsed
100
---
---
h
FE4
V
CE
= 10 V dc; I
C
= 50 mA dc; pulsed
100
300
---
h
FE5
V
CE
= 10 V dc; I
C
= 150 mA dc; pulsed
60
---
---
V
CE(sat)1
I
C
= 10 mA dc; I
B
= 1 mA dc; pulsed
---
0.3
V dc
V
CE(sat)2
I
C
= 50 mA dc; I
B
= 5 mA dc; pulsed
---
0.6
V dc
V
BE(sat)1
Test condition A; I
C
= 10 mA dc; I
B
= 1.0 mA
dc; pulsed
---
0.8
V dc
V
BE(sat)2
Test condition A; I
C
= 50 mA dc; I
B
= 5 mA dc;
pulsed
0.65
0.90
V dc
I
CBO3
Bias condition D; V
CB
= -100 V dc
---
100
μA dc
h
FE6
V
CE
= 10 V dc; I
C
= 50 mA dc
50
---
---
Electrical Characteristics
T
A
= 25
o
C (Group A2, A3)
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