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參數(shù)資料
| 型號(hào)： | 2CK120 |
| 廠商： | Shanghai Sunrise Electronics Co., LTD. |
| 英文描述： | SILICON EPITAXIAL PLANAR SWITCHING DIODE |
| 中文描述： | 硅外延平面開(kāi)關(guān)二極管 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 15K |
| 代理商： | 2CK120 |
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
2CK120
SILICON EPITAXIAL
PLANAR SWITCHING DIODE
REVERSE VOLTAGE: 75V
FORWARD CURRENT: 150mA
FEATURES
Small glass structure ensures high reliability
Fast switching
Low leakage
High temperature soldering guaranteed:
250
o
C/10S/9.5mm lead length
at 5 lbs tension
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Glass,hermetically sealed
Polarity: Color band denotes cathode
Mounting position: Any
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25
o
C ambient temperature unless otherwise specified)
SYMBOL
VALUE
UNITS
Reverse Voltage
Peak Reverse Voltage
Forward Current (average)
Repetitive Forward Peak Current
Forward Voltage (I
F
=10mA)
Reverse Current (V
R
=20V)
Reverse Current (V
R
=75V)
Reverse Current (V
R
=20V,T
J
=100
o
C)
Capacitance (note 1)
Reverse Charge (I
F
=10mA)
Thermal Resistance (junction to ambient, note 2)
Operating Junction and Storage Temperature Range
Notes:
1. V
R
=0V, f=1 MHz
2. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
V
R
V
RM
I
O
I
FRM
V
F
75
100
150
400
1
25
5
50
4
57
0.35
V
V
mA
mA
V
nA
μ
A
μ
A
pF
pC
I
R2
Ct
Qr
R
θ
(ja)
T
STG,
T
J
o
C/mW
o
C
-55
+175
http://www.sse-diode.com
RATINGS
I
R1
TECHNICAL
SPECIFICATION
DO - 35
Dimensions in inches and (millimeters)
1.0 (25.4)
MIN.
.018 (0.46)
.022 (0.56)
.120 (3.0)
.200 (5.1)
1.0 (25.4)
MIN.
DIA .
.060 (1.5)
.090 (2.3)DIA .
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