參數(shù)資料
型號: 2KBP01M-E4/45
廠商: VISHAY SEMICONDUCTORS
元件分類: 橋式整流
英文描述: 2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
封裝: ROHS COMPLIANT, PLASTIC, CASE KBPM, 4 PIN
文件頁數(shù): 3/4頁
文件大小: 86K
代理商: 2KBP01M-E4/45
2KBP005M thru 2KBP10M, 3N253 thru 3N259
Vishay General Semiconductor
Document Number: 88532
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
0
20
40
60
80
100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
T
J = 100 °C
T
J = 125 °C
T
J = 25 °C
Figure 5. Typical Junction Capacitance Per Diode
0.1
1
10
100
1
10
100
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Polarity shown on front side of case: positive lead by beveled corner
0.125 x 45°
(3.2)
0.600 (15.24)
0.560 (14.22)
0.034 (0.86)
0.028 (0.76)
0.105 (2.67)
0.085 (2.16)
0.160 (4.1)
0.140 (3.6)
0.060
(1.52)
0.460 (11.68)
0.50 (12.7) MIN.
0.420 (10.67)
0.500 (12.70)
0.460 (11.68)
0.60
(15.2)
MIN.
DIA.
0.200 (5.08)
0.180 (4.57)
Case Style KBPM
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