參數(shù)資料
型號： 2MBI150U2A-060
廠商： FUJI ELECTRIC CO LTD
元件分類： IGBT 晶體管
英文描述： 150 A, 600 V, N-CHANNEL IGBT
封裝： MODULE-7
文件頁數(shù)： 1/4頁
文件大?。?/td> 101K
代理商： 2MBI150U2A-060
2. Equivalent circuit
2MBI150U2A-060
600V / 150A 2 in one-package
Features
High speed switching
Voltage drive
Low inductance module structure
Applications
Inverter for Motor drive
AC and DC Servo drive amplifier
Uninterruptible power supply
Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*3
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
V F
(terminal)
V F
(chip)
trr
R lead
–
1.0
–
200
6.2
6.7
7.7
–
2.05
2.35
–
2.30
–
1.80
–
2.05
–
–12
–
0.40
1.20
–
0.22
0.60
–
0.16
–
0.48
1.20
–
0.07
0.45
–
1.80
2.20
–
1.85
–
1.60
–
1.65
–
0.35
–
1.39
–
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=150mA
VGE=15V, IC=150A
VCE=10V, VGE=0V, f=1MHz
VCC=300V
IC=150A
VGE=±15V
RG= 24
VGE=0V
IF=150A
mA
nA
V
nF
s
V
s
m
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Thermal resistance
Contact Thermal resistance
–
0.25
–
0.46
–
0.05
–
IGBT
FWD
With thermal compound
°C/W
Equivalent Circuit Schematic
*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : Mounting 2.5 to 3.5Nm(M5 or M5), Terminal 2.5 to 3.5 Nm(M5)
Symbols
Conditions
Characteristics
Unit
Min.
Typ.
Max.
Rth(j-c)
Rth(c-f)*4
IGBT Module U-Series
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
*3:Biggest internal terminal resistance among arm.
Items
Symbols
Conditions
Characteristics
Unit
Min.
Typ.
Max.
Item
Symbol
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Collector current
IC
ICp
-IC
-IC pulse
Collector Power Dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage between terminal and copper base *1
Viso
Screw Torque
Mounting *2
Terminals *2
Rating
600
±20
150
300
150
300
500
+150
-40 to +125
2500
3.5
Unit
V
A
W
°C
VAC
Nm
Conditions
Continuous
1ms
1 device
AC:1min.
相關PDF資料
PDF描述
2MBI150UA-120 200 A, 1200 V, N-CHANNEL IGBT
2MBI200NB-120 200 A, 1200 V, N-CHANNEL IGBT
2MBI300N-120-01B 300 A, 1200 V, N-CHANNEL IGBT
2MBI300N-120-01A 300 A, 1200 V, N-CHANNEL IGBT
2MBI300NB-060-01B 300 A, 600 V, N-CHANNEL IGBT
相關代理商/技術參數(shù)
參數(shù)描述
2MBI150U2A-060-50 制造商:Fuji Electric 功能描述:IGBT DUAL MODULE 150A 600V NPT 制造商:Fuji Electric 功能描述:IGBT, DUAL, MODULE, 150A, 600V, NPT; Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:Module; ;RoHS Compliant: Yes
2MBI150U4A-120 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE
2MBI150U4A-120-50 制造商:Fuji Electric 功能描述:IGBT DUAL MODULE 150A 1200V 制造商:Fuji Electric 功能描述:IGBT, DUAL, MODULE, 150A, 1200V 制造商:Fuji Electric 功能描述:IGBT, DUAL, MODULE, 150A, 1200V; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:735W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7 ;RoHS Compliant: Yes
2MBI150U4B-120 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE
2MBI150U4B-120-50 制造商:Fuji Electric 功能描述:IGBT DUAL MODULE 150A 1200V 制造商:Fuji Electric 功能描述:Dual IGBT 150A 1200V,2MBi150U4B-120-50
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