參數(shù)資料
型號: 2MBI150U4H-170
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: IGBT MODULE
中文描述: 200 A, 1700 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁數(shù): 10/13頁
文件大小: 452K
代理商: 2MBI150U4H-170
H04-004-03a
10
MS5F6144
13
a
b
Vcc=900V, Ic=150A, VGE=±15V, Tj= 25°C
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=3.3
Ω
Vcc=900V, Ic=150A, VGE=±15V, Tj= 125°C
+VGE=15V,-VGE <= 15V, RG >= 3.3
Ω
,Tj <= 125°C
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=3.3
Ω
, Tj=125°C
Switching time vs. Gate resistance (typ.)
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=3.3
Ω
, Tj= 25°C
Reverse bias safe operating area (max.)
Switching loss vs. Gate resistance (typ.)
10
100
1000
10000
0
50
100
150
200
250
300
Collector current : Ic [A]
S
ton
toff
tr
tf
10
100
1000
10000
0
50
100
150
200
250
300
Collector current : Ic [A]
S
ton
tr
tf
toff
10
100
1000
10000
0.1
1.0
10.0
100.0
1000.0
Gate resistance : RG [
Ω
]
S
tr
tf
ton
toff
0
10
20
30
40
50
60
70
0
50
100
150
200
250
300
Collector current : Ic [A]
S
Eon(125°C)
Eon(25°C)
Eoff(125°C)
Err(125°Eoff(25°C)
Err(25°C)
0
50
100
150
200
0.1
1.0
10.0
100.0
1000.0
Gate resistance : RG [
Ω
]
S
Eoff
Err
Eon
0
100
200
300
400
0
500
1000
1500
Collector-Emitter voltage : VCE [V]
C
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