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參數(shù)資料
| 型號： | 2MBI150UC-120 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 200 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | M234, 4 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 114K |
| 代理商： | 2MBI150UC-120 |
2MBI150UC-120
IGBT Module
Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C
Reverse bias safe operating area (max.)
Switching loss vs. Gate resistance (typ.)
+VGE=15V,-VGE <= 15V, RG >= 4.7
,Tj <= 125°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=4.7
, Tj= 25°C
Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=4.7
, Tj=125°C
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=4.7
10
100
1000
10000
0
100
200
300
Switching
time
:
ton,
tr,
toff,
tf
[
nsec
]
Collector current : Ic [ A ]
ton
toff
tr
tf
10
100
1000
10000
0
100
200
300
Switching
time
:
ton,
tr,
toff,
tf
[
nsec
]
Collector current : Ic [ A ]
toff
ton
tr
tf
10
100
1000
10000
1.0
10.0
100.0
Switching
time
:
ton,
tr,
toff,
tf
[
nsec
]
Gate resistance : Rg [ ]
tr
tf
toff
ton
0
5
10
15
20
25
30
0
100
200
300
Switching
loss
:
Eon,
Eoff,
Err
[
mJ/pulse
]
Collector current : Ic [ A ]
Eon(125°C)
Eon(25°C)
Eoff(125°
Err(125°C)
Err(25°C)
Eoff(25°C)
0
50
100
150
1.0
10.0
100.0
Switching
loss
:
Eon,
Eoff,
Err
[
mJ/pulse
]
Gate resistance : Rg [ ]
Eoff
Err
Eon
0
100
200
300
400
0
400
800
1200
Collector
current
:Ic
[
A
]
Collector - Emitter voltage : VCE [ V ]
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參數(shù)描述 |
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| 2MBI150VA-060-50 | 制造商:Fuji Electric 功能描述:Dual IGBT Module 150A 600V 650ns |
| 2MBI150VA-120-50 | 制造商:Fuji Electric 功能描述:Dual IGBT Module 150A 1200V 600ns |
| 2MBI150VB-120-50 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE (V series) 1200V / 150A / 2 in one package |
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