參數(shù)資料
型號: 2MBI200-120-01
廠商: FUJI ELECTRIC HOLDINGS CO., LTD.
英文描述: 1200V / 200A 2 in one-package
中文描述: 1200伏/ 200安培在一個2級封裝
文件頁數(shù): 2/4頁
文件大小: 195K
代理商: 2MBI200-120-01
2MBI200NB-120-01
IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage
Tj=25°C
Collector current vs. Collector-Emitter voltage
Tj=125°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
Switching time vs. Collector current
Vcc=600V, RG=4.7 ohm, VGE=±15V, Tj=25°C
Switching time vs. Collector current
Vcc=600V, RG=4.7 ohm, VGE=±15V, Tj=125°C
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
C
C
500
400
300
200
100
0
500
400
300
200
100
0
0 1 2 3 4 5
0 1 2 3 4 5
C
C
10
8
6
4
2
0
0 5 10 15 20 25
0 5 10 15 20 25
10
8
6
4
2
0
Gate-Emitter voltage : VGE [V]
Gate-Emitter voltage : VGE [V]
S
1000
100
10
0 100 200 300 400
Collector current : Ic [A]
0 100 200 300 400
Collector current : Ic [A]
S
1000
100
10
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