參數(shù)資料
型號(hào): 2MBI300N-120-01
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: Circular Connector; Body Material:Aluminum Alloy; Series:MS3116; No. of Contacts:41; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:22-41 RoHS Compliant: No
中文描述: 300 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁數(shù): 1/4頁
文件大?。?/td> 278K
代理商: 2MBI300N-120-01
2MBI300N-120-01
1200V / 300A 2
in one-package
IGBT Module
Features
· VCE(sat) classified for easy parallel connection
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Collector-Emitter voltage V
CES
Gate-Emitter voltage V
GES
Collector Continuous I
C
current 1ms I
C
pulse
-I
C
1ms -I
C
pulse
Max. power dissipation P
C
Operating temperature T
j
Storage temperature T
stg
Isolation voltage V
is
Screw torque Mounting *
1
Terminals *
2
Rating
1200
±20
300
600
300
600
2100
+150
-40 to +125
AC 2500 (1min.)
3.5
4.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
t
on
t
r
t
off
t
f
V
F
t
rr
– – 0.35
Turn-off time
Diode forward on voltage
Reverse recovery time
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
– – 3.0
– – 45
4.5 – 7.5
– – 3.3
– 48000 –
– 17400 –
– 15480 –
– – 1.2
– 0.25 0.6
– – 1.5
– 0.35 0.5
– – 3.0
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=300mA
V
GE
=15V, I
C
=300A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=300A
V
GE
=±15V
R
G
=2.7ohm
I
F
=300A, V
GE
=0V
I
F
=300A
mA
μA
V
V
pF
μs
V
μs
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Thermal resistance Rth(j-c)
Rth(c-f)*
– 0.0167 –
* :
This is the value which is defined mounting on the additional cooling fin with thermal compound
– – 0.06
– – 0.15
IGBT
Diode
the base to cooling fin
°C/W
°C/W
°C/W
Equivalent Circuit Schematic
¤ Current control circuit
G1 E1 G2 E2
C1
E2
C2E1
¤
¤
*
1 :
Recommendable value : 2.5 to 3.5N·m (M5) or (M6)
*
2 :
Recommendable value : 3.5 to 4.5N·m (M6)
V
CE(sat)
classification
Rank Lenge Conditions
F 2.25 to 2.50V
A 2.40 to 2.65V Ic = 300A
B 2.55 to 2.80V V
GE
= 15V
C 2.70 to 2.95V Tj = 25°C
D 2.85 to 3.10V
E 3.00 to 3.30V
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