參數(shù)資料
型號(hào)： 2MBI300U4J-120-50
廠商： FUJI ELECTRIC CO LTD
元件分類(lèi)： IGBT 晶體管
英文描述： IGBT Module
中文描述： 450 A, 1200 V, N-CHANNEL IGBT
封裝： ROHS COMPLIANT PACKAGE-19
文件頁(yè)數(shù)： 4/15頁(yè)
文件大小： 656K
代理商： 2MBI300U4J-120-50
H04-004-03a
4
15
MS5F6857
Storage temperature
Isolation
voltage
(*7) This is the value which is defined mounting on the additional cooling fin with thermal compound.
Contact Thermal resistance
(1 device) (*7)
Rth(c-f)
with Thermal Compound
-
-
-
0.09
0.15
o
C/W
FWD
-
0.0167
-
Thermal resistance(1device)
Rth(j-c)
IGBT
-
5. Thermal resistance characteristics
Items
Symbols
Conditions
Characteristics
min.
Units
typ.
max.
0.6
N m
Screw
Torque
(*5) Recommendable Value : PC-Board 0.4 to 0.6 Nm (M2.5)
(*4) Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)
Mounting (*3)
Terminals (*4)
PC-Board (*5)
3.5
4.5
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
-
T
(*6) Biggest internal terminal resistance among arm.
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Turn-on time
B value
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance,
terminal-chip (*6)
3375
3450
K
I
Zero gate voltage
collector current
B
R
T=25/50
o
C
3305
-
Ω
T=100
o
C
465
495
520
T=25
o
C
-
Items
Resistance
5000
between terminal and copper base (*1)
between thermistor and others (*2)
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : Mounting 2.5 to 3.5 Nm (M5)
us
R lead
1.00
-
m
Ω
trr
-
2.00
2.10
1.65
1.75
2.15
-
1.80
-
IF=300A
-
Tj=125
o
C
-
-
0.35
Tj=25
o
C
V
-
-
-
VF
(terminal)
VF
(chip)
IF=300A
VGE=0V
Tj=25
o
C
Tj=125
o
C
0.41
0.07
1.00
0.30
tf
-
toff
RG=2.0
Ω
-
-
tr
tr(i)
Ic=300A
VGE=±15V
-
-
0.10
0.03
-
nF
ton
Vcc=600V
-
0.32
1.20
0.60
us
Cies
V
Ic=300mA
Ic=300A
VGE=15V
VGE(th)
VCE=20V
4.5
6.5
8.5
VCE=0V
VGE=±20V
-
-
600
max.
Characteristics
min.
ICES
-
-
3.0
VGE=0V
VCE=1200V
Items
Conditions
Symbols
typ.
Junction temperature
o
C
Viso
AC : 1min.
2500
VAC
Tj
Tstg
A
-Ic
-Ic pulse
Pc
600
300
450
300
900
Gate-Emitter voltage
Collector current
Ic
Continuous
1ms
1 device
Tc=25
o
C
Tc=80
o
C
Tc=25
o
C
Icp
1ms
Tc=80
o
C
2.45
-
2.05
-
-
-
2.50
1.90
2.10
34
-
Collector-Emitter voltage
mA
nA
Units
600
1385
+150
V
V
IGES
Collector Power Dissipation
Tj=125
o
C
Tj=25
o
C
Tj=125
o
C
VCE(sat)
(chip)
W
4. Electrical characteristics ( at Tj= 25
o
C unless otherwise specified )
V
-
VCE(sat)
(terminal)
Tj=25
o
C
-
2.30
-40 to +125
Conditions
3. Absolute Maximum Ratings ( at Tc= 25
o
C unless otherwise specified )
Maximum
Ratings
1200
VGES
Units
±20
VCES
Symbols
VCE=10V,VGE=0V,f=1MHz
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