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參數(shù)資料
| 型號(hào)： | 2MBI450U4J-120-50 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, MODULE-22 |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 639K |
| 代理商： | 2MBI450U4J-120-50 |
H04-004-03a
4
15
MS5F6858
Storage temperature
(*4) Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)
(*5) Recommendable Value : PC-Board 0.4 to 0.6 Nm (M2.5)
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : Mounting 2.5 to 3.5 Nm (M5)
3.5
N m
Terminals (*4)
4.5
PC-Board (*5)
0.6
Screw
Torque
Mounting (*3)
-
5. Thermal resistance characteristics
Items
Symbols
Conditions
Units
min.
typ.
max.
Characteristics
(*7) This is the value which is defined mounting on the additional cooling fin with thermal compound.
0.0167
-
oC/W
0.10
FWD
0.06
Contact Thermal resistance
(1 device) (*7)
Rth(c-f)
with Thermal Compound
-
Rth(j-c)
Thermal resistance(1device)
IGBT
-
VCE(sat)
(chip)
Tj=25
oC
VCE(sat)
(terminal)
Ic=450A
Tj=25
oC
VGE=15V
Tj=125
oC
VCE=10V,VGE=0V,f=1MHz
-
2.10
-
50
IGES
VCE=0V
Tc=80
oC
3. Absolute Maximum Ratings ( at Tc= 25
oC unless otherwise specified )
Maximum
Ratings
-40 to +125
VGES
Units
V
600
±20
VCES
1200
Symbols
Conditions
1200
Tc=80
oC
Tc=25
oC
Icp
1ms
Tstg
Tj=125
oC
-
Collector Power Dissipation
1 device
Pc
oC
Isolation
voltage
Viso
AC : 1min.
2500
VAC
Collector-Emitter voltage
mA
nA
Units
450
900
+150
450
2080
4. Electrical characteristics ( at Tj= 25
oC unless otherwise specified )
-Ic
V
-
2.40
2.55
-
2.60
Tj
W
Junction temperature
Items
Conditions
Symbols
typ.
V
Gate-Emitter voltage
Collector current
Ic
Continuous
Tc=25
oC
A
900
-Ic pulse
1ms
max.
Characteristics
min.
ICES
-
3.0
VGE=0V
VCE=1200V
-
600
VGE=±20V
V
Ic=450mA
VGE(th)
VCE=20V
4.5
6.5
8.5
-
1.90
2.05
-
nF
ton
Vcc=600V
-
0.32
1.20
us
Cies
0.60
-
tr
Ic=450A
-
0.10
tr(i)
VGE=±15V
-
0.03
0.41
1.00
tf
-
0.07
0.30
toff
RG=1.1Ω
-
VF
(terminal)
IF=450A
Tj=25
oC
VGE=0V
Tj=125
oC
VF
(chip)
V
-
2.20
-
1.65
1.80
1.75
-
2.10
2.25
IF=450A
-
Tj=125
oC
-
0.35
Tj=25
oC
-
mΩ
trr
-
Items
Resistance
5000
between terminal and copper base (*1)
between thermistor and others (*2)
us
R lead
1.00
T=25/50
oC
3305
-
Ω
T=100
oC
465
495
520
T=25
oC
-
Input capacitance
Turn-on time
B value
B
R
Zero gate voltage
collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
T
h
e
rm
is
to
r
(*6) Biggest internal terminal resistance among arm.
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance,
terminal-chip (*6)
3375
3450
K
In
ve
rt
er
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