參數(shù)資料
型號(hào): 2MBI450UE-120
英文描述: DUAL IGBT
中文描述: 雙IGBT的
文件頁(yè)數(shù): 10/13頁(yè)
文件大?。?/td> 748K
代理商: 2MBI450UE-120
H04-004-03a
MS5F 5618
13
a
10
Vcc=300V, Ic=400A, VGE=±15V, Tj= 125
Reverse bias safe operating area (max.)
+VGE=15V,-VGE
15V, RG
6.8
Ω
,Tj
125
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=6.8
Ω
, Tj= 25
Vcc=300V, Ic=400A, VGE=±15V, Tj= 25
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=6.8
Ω
, Tj=125
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=6.8
Ω
Switching loss vs. Gate resistance (typ.)
10
100
1000
10000
0
200
400
600
800
S
Collector current : Ic [ A ]
tr
tf
toff
ton
10
100
1000
10000
0
200
400
600
800
S
Collector current : Ic [ A ]
tr
tf
toff
ton
10
100
1000
10000
1.0
10.0
100.0
S
Gate resistance : Rg [
]
tr
tf
toff
ton
0
10
20
30
40
0
200
400
600
800
S
Collector current : Ic [ A ]
Eon(125
)
Eon(25
)
Eoff(125
)
Err(125
)
Err(25
)
Eoff(25
)
0
10
20
30
40
50
60
1.0
10.0
100.0
S
Gate resistance : Rg [
]
Eoff
Err
Eon
0
200
400
600
800
1000
0
200
400
600
800
C
Collector - Emitter voltage : VCE [ V ]
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