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參數(shù)資料
| 型號： | 2MBI600U2E-060 |
| 英文描述： | IGBTs |
| 中文描述： | IGBT的 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 446K |
| 代理商： | 2MBI600U2E-060 |
H04-004-03a
MS5F 5619
13
a
4
3.Absolute Maximum Ratings ( at Tc= 25
℃
unless otherwise specified
）
(*
1
(*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5 or M6) / Terminal 3.5~4.5 Nm (M6)
4. Electrical characteristics ( at Tj= 25
℃
unless otherwise specified)
(*)
Biggest internal terminal resistance among arm.
Lead resistance, terminal-chip *
m
Ω
R lead
-
tr
Turn-on time
Zero gate voltage
Collector current
Gate-Emitter
leakage current
VGE(th)
VCE(sat)
(
terminal)
Vcc = 300V
Ic = 600A
VGE=±15V
Rg = 4.7
Ω
Ic = 600mA
Cies
ton
VCE=10V,VGE=0V,f=1MHz
VGE=15V
Ic = 600A
tr (i)
toff
tf
VF
Tj=125
℃
Tj= 25
℃
Tj=125
℃
0.07
a
1.90
(terminal)
Tj= 25
℃
ｔｒｒ
-
VF
(chip)
-
-
IF = 600A
a
2.30
-
V
a
1.65
-
0.45
1.20
0.45
-
a
1.60
-
a
1.95
-
-
VGE=0V
-
-
-
-
-
0.40
0.22
0.16
0.48
650
±20
Ic
Icp
-Ic
600
1200
600
1200
a
2400
Continuous
1ms
V
V
Items
Symbols
Conditions
VCES
VGES
Collector-Emitter voltage
Gate-Emitter voltage
VAC
N
m
-Ic pulse
Pc
Tj
Tstg
A
℃
W
1 device
AC : 1min.
150
Collector current
Junction temperature
Storage temperature
Isolation
voltage
Collector Power Dissipation
Terminals *
2
Screw Torque
Units
max.
typ.
min.
Characteristics
Viso
Mounting *
2
-40
～
+125
2500
between terminal and copper base *
1
-
-
3.5
4.5
Conditions
6.2
VGE = 0V
VCE = 600V
Items
Symbols
VGE=±20V
VCE = 20V
VCE = 0V
IGES
ICES
nA
3.0
mA
V
-
-
-
-
7.7
V
600
6.7
Units
-
-
-
1.85
a
2.10
43.0
Maximum
Ratings
-
-
2.15
a
2.40
2.45
μ
s
IF = 600A
0.35
-
nF
1.20
0.60
-
μ
s
VCE(sat)
(chip)
Tj= 25
℃
Tj=125
℃
Tj= 25
℃
Tj=125
℃
Turn-off time
Forward on voltage
Reverse recovery time
-
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
-
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參數(shù)描述 |
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| 2MBI600VJ-120-50 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
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