參數(shù)資料
型號: 2N1132
廠商: MICROSEMI CORP
元件分類: 小信號晶體管
英文描述: LOW POWER PNP SILICON TRANSISTOR
中文描述: 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
封裝: TO-39, 3 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 56K
代理商: 2N1132
2N1131, 2N1132 JAN, JANTX
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward Current Transfer Ratio
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 5.0 mAdc, V
CE
= 10 Vdc
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
Base-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
DYNAMIC CHARACTERISTICS
Small-Signal Short Circuit Forward-Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1 kHz
I
C
= 5.0 mAdc, V
CE
= 10 Vdc, f = 1 kHz
Small-Signal Open-Circuit Output Admittance
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc
I
C
= 5.0 mAdc, V
CE
= 10 Vdc
Small-Signal Short-Circuit Input Impedance
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc
I
C
= 5.0 mAdc, V
CE
= 10 Vdc
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 10 Vdc, f = 20 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
Input Capacitance
V
EB
= 0.5 Vdc, I
C
= 0, 100 kHz
f
1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See figure 2 of MIL-PRF-19500/177)
2N1131, L
2N1132, L
2N1131, L
2N1132, L
h
FE
20
30
15
25
45
90
V
CE(sat)
1.3
Vdc
V
BE(sat)
1.5
Vdc
2N1131, L
2N1132, L
2N1131, L
2N1132, L
h
fe
15
30
20
30
50
90
h
ob
1.0
5.0
35
10
μ
mho
h
ib
25
2N1131, L
2N1132, L
h
fe
2.5
3.0
20
20
C
obo
45
pF
C
ibo
80
pF
t
on +
t
off
50
η
s
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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