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參數(shù)資料
| 型號(hào)： | 2N1132L |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | LOW POWER PNP SILICON TRANSISTOR |
| 中文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | TO-5, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 56K |
| 代理商： | 2N1132L |
2N1131, 2N1132 JAN, JANTX
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward Current Transfer Ratio
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 5.0 mAdc, V
CE
= 10 Vdc
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
Base-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
DYNAMIC CHARACTERISTICS
Small-Signal Short Circuit Forward-Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1 kHz
I
C
= 5.0 mAdc, V
CE
= 10 Vdc, f = 1 kHz
Small-Signal Open-Circuit Output Admittance
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc
I
C
= 5.0 mAdc, V
CE
= 10 Vdc
Small-Signal Short-Circuit Input Impedance
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc
I
C
= 5.0 mAdc, V
CE
= 10 Vdc
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 10 Vdc, f = 20 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Input Capacitance
V
EB
= 0.5 Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See figure 2 of MIL-PRF-19500/177)
2N1131, L
2N1132, L
2N1131, L
2N1132, L
h
FE
20
30
15
25
45
90
V
CE(sat)
1.3
Vdc
V
BE(sat)
1.5
Vdc
2N1131, L
2N1132, L
2N1131, L
2N1132, L
h
fe
15
30
20
30
50
90
h
ob
1.0
5.0
35
10
μ
mho
h
ib
25
2N1131, L
2N1132, L
h
fe
2.5
3.0
20
20
C
obo
45
pF
C
ibo
80
pF
t
on +
t
off
50
η
s
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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| 2N1136 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3 |
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| 2N1136B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 6A I(C) | TO-3 |
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| 2N1137A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 6A I(C) | TO-3 |
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