參數(shù)資料
型號: 2N2219A
廠商: STMICROELECTRONICS
元件分類: 小信號晶體管
英文描述: 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
封裝: METAL PACKAGE-3
文件頁數(shù): 2/7頁
文件大?。?/td> 168K
代理商: 2N2219A
THERMAL DATA
TO-39
TO-18
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
50
187.5
83.3
300
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 60 V
Tj = 150
oC
10
nA
A
ICEX
Collector Cut-off
Current (VBE = -3V)
VCE = 60 V
10
nA
IBEX
Base Cut-off Current
(VBE = -3V)
VCE = 60 V
20
nA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 3 V
10
nA
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = 10
A
75
V
V(BR)CEO
Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
40
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10
A
6V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 150 mA
IB = 15 mA
IC = 500 mA
IB = 50 mA
0.3
1
V
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 150 mA
IB = 15 mA
IC = 500 mA
IB = 50 mA
0.6
1.2
2
V
hFE
DC Current Gain
IC = 0.1 mA
VCE = 10 V
IC = 1 mA
VCE = 10 V
IC = 10 mA
VCE = 10 V
IC = 150 mA
VCE = 10 V
IC = 500 mA
VCE = 10 V
IC = 150 mA
VCE = 1 V
IC = 10 mA
VCE = 10 V
Tamb = -55
oC
35
50
75
100
40
50
35
300
hfe
Small Signal Current
Gain
IC = 1 mA
VCE = 10 V
f = 1KHz
IC = 10 mA
VCE = 10 V
f = 1KHz
50
75
300
375
fT
Transition Frequency
IC = 20 mA
VCE = 20 V
f = 100 MHz
300
MHz
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = 0.5 V
f = 100KHz
25
pF
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 100 KHz
8
pF
Re(hie)
Real Part of Input
Impedance
IC = 20 mA
VCE = 20 V
f = 300MHz
60
* Pulsed: Pulse duration = 300
s, duty cycle ≤ 1 %
2N2219A / 2N2222A
2/7
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N2219A 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-5
2N2219A_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SPEED SWITCHES
2N2219A_11 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:SMALL SIGNAL BIPOLAR NPN SILICON
2N2219A-B 功能描述:兩極晶體管 - BJT 800mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N2219A-BP 功能描述:兩極晶體管 - BJT 800mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2