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參數(shù)資料
| 型號： | 2N2222ABC-1 |
| 廠商： | MICROSEMI CORP-LOWELL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SWITCHING TRANSISTOR NPN SILICON |
| 中文描述： | 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 17K |
| 代理商： | 2N2222ABC-1 |
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukPrelim. 3/00
LA B
S E M E
2N2222ACSM
HIGH SPEED, MEDIUM POWER, NPN
SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
Hermetically sealed surface mount version
of the popular 2N2222A for high reliability /
space applications requiring small size
and low weight devices.
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
R
ja
T
stg,Tj
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
B
= 0)
Collector Current
Total Device Dissipation
Derate above 50°C
Thermal Resistance Junction to Ambient
Storage Temperature,Operating Temp Range
75V
40V
6V
600mA
350mW
2.0mW / °C
350°C/W
–55 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter
PAD 3 – Collector
2
1
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2
(
0
(
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
(0.31
rad.
A =
3
SOT23 CERAMIC
(LCC1 PACKAGE)
相關PDF資料 |
PDF描述 |
|---|---|
| 2N2222ABS | SWITCHING TRANSISTOR NPN SILICON |
| 2N2222ABS-1 | SWITCHING TRANSISTOR NPN SILICON |
| 2N2222AD | SWITCHING TRANSISTOR NPN SILICON |
| 2N2222ADC | SWITCHING TRANSISTOR NPN SILICON |
| 2N2222ADC-1 | SWITCHING TRANSISTOR NPN SILICON |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2222A-BP | 功能描述:兩極晶體管 - BJT 800mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2222ABS | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON |
| 2N2222ABS-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON |
| 2N2222AC1 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL NPN TRANSISTOR |
| 2N2222AC3A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON SWITCHING NPN TRANSISTOR |
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