參數(shù)資料
型號： 2N2222ADCSM
英文描述： High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開關(guān)型NPN晶體管（高可靠性、陶瓷表貼封裝）)
中文描述： 高速中功率NPN開關(guān)晶體管氣密六窯業(yè)表面貼裝封裝，高可靠性的應(yīng)用（高速，中等功率，開關(guān)型npn型晶體管（高可靠性，陶瓷表貼封裝））
文件頁數(shù)： 2/2頁
文件大?。?/td> 18K
代理商： 2N2222ADCSM
2N2222ADCSM
LA B
S E M E
Prelim. 3/00
Parameter
Delay Time
Rise Time
Storage Time
Fall Time
Test Conditions
V
CC
= 30V
I
C1
= 150mA
V
CC
= 30V
I
B1
= I
B2
= 15mA
Min.
Typ.
Max.
10
25
225
60
Unit
ns
ns
ns
ns
t
d
t
r
t
s
t
f
fTis defined as the frequency at which hFEextrapolates to unity.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Parameter
Transition Frequency
Output Capacitance
Input Capacitance
Test Conditions
I
C
= 20mA
V
CE
= 20V
V
CB
= 10V
I
E
= 0
V
BE
= 0.5V
I
C
= 0
I
C
= 1mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
Min.
300
Typ.
Max.
Unit
MHz
pF
pF
Parameter
Collector
–
Emitter Sustaining Voltage
Collector
–
Base Breakdown Voltage
Emitter
–
Base Breakdown Voltage
Collector Cut-off Current (I
C
= 0)
Test Conditions
I
C
= 10mA
I
C
= 10
m
A
I
E
= 10
m
A
I
B
= 0
I
E
= 0
T
C
= 125
°
C
I
C
= 0
V
CE
= 60V
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 500mA
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 10mA
I
C
= 150mA
I
C
= 150mA
I
C
= 500mA
Min.
40
75
6
Typ.
Max.
Unit
V
V
V
nA
nA
m
A
nA
nA
I
C
= 0
V
CE
= 60V
V
CB
= 60V
V
EB
= 3V (off)
V
EB
= 3V (off)
I
B
= 15mA
I
B
= 50mA
I
B
= 15mA
I
C
= 50mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 1V
V
CE
= 10V
ELECTRICAL CHARACTERISTICS PER SIDE
(T
C
= 25
°
C unless otherwise stated)
V
CEO(sus)*
V
(BR)CBO*
V
(BR)EBO*
I
CEX*
I
CBO*
Collector
–
Base Cut-off Current
I
EBO*
I
BL*
Emitter Cut-off Current (I
C
= 0)
Base Current
V
CE(sat)*
Collector
–
Emitter Saturation Voltage
V
BE(sat)*
Base
–
Emitter Saturation Voltage
h
FE*
DC Current Gain
T
A
=
–
55
°
C
10
10
10
10
20
0.3
1
1.2
2
0.6
35
50
75
35
100
50
40
300
V
V
—
f
T
C
ob
C
ib
hfe
Small Signal Current Gain
f = 100MHz
f = 1.0MHz
f = 1.0MHz
f = 1kHz
f = 1kHz
8
30
300
375
50
75
V
BE
= 0.5V (off)
I
B1
= 15mA
I
C
= 150mA
* Pulse test t
p
= 300
m
s ,
d ￡
2%
DYNAMIC CHARACTERISTICS PER SIDE
(T
C
= 25
°
C unless otherwise stated)
SWITCHING CHARACTERISTICS PER SIDE(RESISTIVE LOAD)
(T
C
= 25
°
C unless otherwise stated)
http://www.semelab.co.uk
相關(guān)PDF資料
PDF描述
2N2222A HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR
2N2222A High Speed Medium Power NPN Switching Transistor(高速、中等功率、開關(guān)型NPN晶體管)
2N2222A HIGH SPEED SWITCHES
2N2222A NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2222A Small Signal Transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N2222ADCSM_06 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL HIGH SPEED, MEDIUM POWER
2N2222ADIE 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON
2N2222A-DIE 制造商:STMicroelectronics 功能描述:2N2222A-DIE - Gel-pak, waffle pack, wafer, diced wafer on film
2N2222ADS 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON
2N2222ADS-1 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。