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參數(shù)資料
| 型號： | 2N2484 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN general purpose transistor |
| 中文描述： | 50 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 封裝： | METAL PACKAGE-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | 2N2484 |
Parameter
Collector – Base Breakdown Voltage
Collector – Emitter Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector – Emitter Saturation Voltage
Base – Emitter On Voltage
Test Conditions
I
C
= 10
μ
A
I
C
= 10mA
I
E
= 10
μ
A
V
CB
= 45V
V
BE
= 5V
I
C
= 1mA
I
C
= 0.1mA
I
C
= 1
μ
A
I
C
= 10
μ
A
I
C
= 100
μ
A
I
C
= 500
μ
A
I
C
= 1mA
I
C
= 10mA
f = 5MHz
f = 30MHz
V
CB
= 5V
f = 140kHz
V
BE
= 0.5V
f = 140kHz
V
CE
= 5V
I
C
= 1mA
f = 1kHz
Min.
60
60
6
Typ.
Max.
Unit
V
nA
V
—
MHz
pF
pF
k
x 10
-6
—
10
10
0.35
0.7
0.5
30
100
175
200
250
500
800
15
60
6
6
3.5
24
800
900
150
I
E
= 0
I
B
= 0
I
C
= 0
I
E
= 0
I
C
= 0
I
B
= 0.1mA
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
I
C
= 0.05mA
I
C
= 0.5mA
I
E
= 0
I
C
= 0
2N2484CSM
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/95
LAB
SEME
ELECTRICAL CHARACTERISTICS
(TA= 25°C unless otherwise stated)
V
(BR)CBO*
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
DC Current Gain
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
h
ie
h
re
h
fe
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
* Pulse Test: t
p
≤
300
μ
s,
δ ≤
2%.
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|---|---|
| 2N2484 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
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