參數(shù)資料
型號： 2N2604A
廠商： SEMICOA CORP
元件分類： 小信號晶體管
英文描述： 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
封裝： HERMETIC SEALED, METAL CAN-3
文件頁數(shù)： 2/2頁
文件大?。?/td> 199K
代理商： 2N2604A
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. H
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N2904A
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA
60
Volts
Collector-Base Cutoff Current
ICBO1
VCB = 60 Volts
10
A
Collector-Base Cutoff Current
ICBO2
VCB = 50 Volts
10
nA
Collector-Base Cutoff Current
ICBO3
VCB = 50 Volts, TA = 150
OC
10
A
Collector-Emitter Cutoff Current
ICES
VCE = 60 Volts
1
A
Emitter-Base Cutoff Current
IEBO1
VEB = 5 Volts
10
A
Emitter-Base Cutoff Current
IEBO2
VEB = 3.5 Volts
50
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
TA = -55
OC
40
20
175
120
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
1.3
2.6
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.4
1.6
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 20 Volts, IC = 50 mA,
f = 100 MHz
2.0
Small Signal Short Circuit Forward
Current Transfer Ratio
hFE
VCE = 10 Volts, IC = 1 mA,
f = 1 kHz
40
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
8
pF
Open Circuit Input Capacitance
CIBO
VEB = 2.0 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
30
pF
Switching Characteristics
Saturated Turn-On Time
ton
45
ns
Saturated Turn-Off Time
toff
300
ns
相關(guān)PDF資料
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2N2604 30 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-46
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N2604UB 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP SILICON LOW POWER TRANSISTOR
2N2605 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.03A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.03A 3PIN TO-46 - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 60V 0.03A 3-Pin TO-46
2N2605A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 30MA I(C) | TO-46
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2N2605JAN 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 60V 0.03A 3-Pin TO-46
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