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參數(shù)資料
| 型號： | 2N2605UB |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 152K |
| 代理商： | 2N2605UB |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/354
T4-LDS-0092 Rev. 2 (101320)
Page 1 of 4
DEVICES
LEVELS
2N2604
2N2604UB
JAN
2N2605
2N2605UB
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N2604
2N2605
Unit
Collector-Base Voltage
VCBO
80
70
Vdc
Collector-Emitter Voltage
VCEO
60
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current
IC
30
mAdc
Total Power Dissipation @ TA = +25°C
(1)
PT
400
mW/°C
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Ambient
RθJA
437
°C/mW
UB
275
Note:
1/ Consult 19500/354 for thermal curves
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Collector-Base Cutoff Current
ICBO
VCB = 80V dc
VCB = 70V dc
VCB = 50V dc
VCB = 50V dc, TA = +150°C
2N2604, UB
2N2605, UB
2N2604, 2N2605, UB
10.0
5.0
uAdc
nAdc
uAdc
Collector-Emitter Breakdown Current
IC = 10mAdc
V(BR)CEO
60
Vdc
Emitter-Base Cutoff Current
VEB = 6.0Vdc
VEB = 5.0Vdc
IEBO
10.0
2.0
uAdc
ηAdc
Collector-Emitter Cutoff Current
VCE = 50Vdc
ICES
10
ηAdc
TO-46 (TO-206AB)
UB Package
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| 2N2607 | 制造商:Intersil Corporation 功能描述: 制造商:Intersil Corporation 功能描述:P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
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