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參數(shù)資料
| 型號： | 2N2904J |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Silicon PNP Transistor |
| 中文描述： | 硅PNP晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 205K |
| 代理商： | 2N2904J |
Copyright
2002
Rev. H
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.
SEMICOA
.com
Page 1 of 1
2N2904
Silicon PNP Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N2904J)
JANTX level (2N2904JX)
JANTXV level (2N2904JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.
SEMICOA
.com or (714) 979-1900
Applications
General purpose
Low power
PNP silicon transistor
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 0600
Reference document:
MIL-PRF-19500/290
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise specified
Rating
40
60
Parameter
Symbol
V
CEO
V
CBO
Unit
Volts
Volts
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
EBO
5
Volts
Collector Current, Continuous
Power Dissipation, T
A
= 25
°
C
Derate above 60
°
C
Power Dissipation, T
C
= 25
°
C
Derate above 25
°
C
Thermal Resistance
I
C
600
0.8
5.7
3.0
17.2
mA
P
T
W
mW/
°
C
W
mW/
°
C
°
C/W
P
T
R
θ
JA
175
Operating Junction Temperature
T
J
-65 to +200
°
C
Storage Temperature
T
STG
-65 to +200
°
C
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| 2N2904J.TX.V | 制造商:RAYTHEON 制造商全稱:RAYTHEON 功能描述:Medium Current General Purpose Amplifiers and Switches |
| 2N2904JANTX | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 40V 0.6A 3-Pin TO-39 制造商:Microsemi 功能描述:Trans GP BJT PNP 40V 0.6A 3-Pin TO-39 |
| 2N2904JV | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor |
| 2N2904JX | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor |
| 2N2904L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
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