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參數(shù)資料
| 型號(hào)： | 2N2906A |
| 英文描述： | PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
| 中文描述： | 進(jìn)步黨硅通用放大器和開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 29K |
| 代理商： | 2N2906A |
Chip Type 2C2904A
Geometry 0600
Polarity PNP
Data S heet No. 2C2904A
Generic Packaged Parts:
2N2904A
Chip type
2C2904A
by Semicoa
Semiconductors provides perfor-
mance similar to these devices.
Product Summary:
Part Numbers:
2N2904A, 2N2904, 2N2906A, 2N2906,
2N2904AUB, SD2904A, SD2904AF, SQ2904A,
SQ2904AF, 2N3485, 2N3485A
APPLICATIONS:
Designed for gen-
eral purpose switching and amplifier
applications.
Features:
Top
Al - 18 k min.
Au - 6.5 k nom.
4.0 mils x 4.0 mils
4.0 mils x 4.0 mils
8 mils nominal
Backside
Emitter
Base
Die Thickness
Chip Area
Top Surface
20 mils x 20 mils
Silox Passivated
Mechanical Specifications
Metallization
Bonding Pad Size
Parameter
BV
CEO
BV
CBO
BV
EBO
I
CBO
h
FE
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 μs, duty cycle less than 2%.
Test conditions
I
C
= 10.0 mA, I
B
= 0
I
C
= 10 μA, I
E
= 0
I
E
= 10 μA, I
C
= 0
V
CB
= 50 V, I
E
= 0
I
C
= 150 mA dc, V
CE
= 10 V
Min
60
60
5.0
---
40
Max
---
---
---
10
120
Unit
V dc
V dc
V dc
nA
---
Electrical Characteristics
T
A
= 25
o
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N2906 | 1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS |
| 2N3485 | Small Signal Transistors |
| 2N3485A | Small Signal Transistors |
| 2N2906 | PNP SILICON PLANAR TRANSISTORS |
| 2N2906 | Chip Type 2C2904A Geometry 0600 Polarity PNP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2906A_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor |
| 2N2906A_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RADIATION HARDENED |
| 2N2906ACSM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
| 2N2906ADCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Dual Bipolar PNP Devices in a hermetically sealed |
| 2N2906AJ.TX.V | 制造商:RAYTHEON 制造商全稱:RAYTHEON 功能描述:Medium Current General Purpose Amplifiers and Switches |
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