參數(shù)資料
型號： 2N2906AUA
廠商： MICROSEMI CORP-LAWRENCE
元件分類： 小信號晶體管
英文描述： PNP SMALL SIGNAL SILICON TRANSISTOR
中文描述： 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： CERAMIC PACKAGE-4
文件頁數(shù)： 1/2頁
文件大?。?/td> 44K
代理商： 2N2906AUA
PNP SILICON PLANAR SWITCHING TRANSISTORS
2N2906A
2N2907A
TO-18
Switching And Linear Application DC to VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2906A, 07A
UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25 degC
Derate Above 25deg C
@ Tc=25 degC
Derate Above 25deg C
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
VCEO
VCBO
VEBO
IC
PD
60
60
5.0
600
400
2.28
1.8
10.3
V
V
V
mA
mW
mW/deg C
PD
W
mW/deg C
Tj, Tstg
deg C
DESCRIPTION
SYMBOL
TEST CONDITION
VALUE
MIN
60
60
5.0
-
MAX
UNIT
V
V
V
nA
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
VCEO*
VCBO
VEBO
ICBO
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=50V, IE=0
-
-
-
10
Ta=150 deg C
VCB=50V, IE=0
VCE=30V, VBE=0.5V
VCE=30V, VBE=0.5V
-
-
-
-
10
50
50
0.4
1.6
1.3
2.6
uA
nA
nA
V
V
V
V
ICEX
IB
VCE(Sat)* IC=150mA,IB=15mA
IC=500mA,IB=50mA
VBE(Sat) * IC=150mA,IB=15mA
IC=500mA,IB=50mA
Base Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
-
-
2N2906A
2N2907A
DC Current Gain
hFE
IC=0.1mA,VCE=10V
IC=1mA,VCE=10V
IC=10mA,VCE=10V
IC=150mA,VCE=10V*
IC=500mA,VCE=10V*
>40
>40
>40
40-120
>40
>75
>100
>100
100-300
>50
http://www.bocasemi.com page: 1
Boca Semiconductor Corp.
BSC
相關(guān)PDF資料
PDF描述
2N2906AUB PNP SMALL SIGNAL SILICON TRANSISTOR
2N2906E 2.0A,100V,25NS,UF Avalanche,SMD
2N2907ACSM High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開關(guān)型PNP晶體管（高可靠性、陶瓷表貼封裝）)
2N2907ADCSM Dual High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開關(guān)型雙PNP晶體管（高可靠性、陶瓷表貼封裝）)
2N2907A General Purpose Amplifiers and Switches(硅平面外延工藝PNP晶體管(用于高速飽和開關(guān)))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N2906AUB 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.6A 3PIN UB - Gel-pak, waffle pack, wafer, diced wafer on film
2N2906AUBC 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RADIATION HARDENED
2N2906AUBJANSR 制造商:Microsemi Corporation 功能描述:
2N2906CSM 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1
2N2906DCSM 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Dual Bipolar PNP Devices in a hermetically sealed
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