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參數(shù)資料
| 型號(hào)： | 2N2907 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | DIODE RECTIFIER FAST RECOVERY 200V 2A |
| 中文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 封裝： | TO-18, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 21K |
| 代理商： | 2N2907 |
Parameter
OFF CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
hfe
lhfel
C
obo
Open Circuit Output Capacitance
C
ibo
Input Capacitance(output open)
SWITCHING CHARACTERISTICS
Forward Current Transfer Ratio
Forward Curent Transfer Ratio
t
on
t
off
Turn-On Time
Turn-Off Time
I
C
= 1mA
I
C
= 50mA V
CE
= 20V f = 100MHz
V
CB
= 10V 100kHz
￡
f
￡
1MHz
V
EB
= 2V
100kHz
￡
f
￡
1MHz
V
CE
= 10V f = 1kHz
V
CC
= 30V I
C
150mA
V
CC
= 30V I
C
150mA
I
B1
= 15mA
I
B1
= I
B1=
15mA
2N2907AQ–LCC20
Prelim.6/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
I
C
= 10mA
I
C
= 10
m
A
I
E
= 10
m
A
I
E
= 0
I
B
= 0
I
E
= 0
I
C
= 0
V
CB
= 50V
T
A
= 150°C
V
EB
= 3.5V
I
C
= 0
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 500mA
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 150mA
(3)
V
CE
= 10V
I
C
= 500mA
(3)
V
CE
= 10V
I
C
= 10mA
I
B
= 15mA
(3)
I
B
= 50mA
(3)
I
B
= 15mA
(3)
I
C
= 50mA
(3)
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
T
A
= –55°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
I
CBO
Collector – Base Cut-off Current
I
EBO
Emitter Base Cut-off Current
ON CHARACTERISTICS
V
CE(sat)
Collector – Emitter Saturation Voltage
V
BE(sat)
Base – Emitter Saturation Voltage
h
FE
Forwared Current Transfer Ratio
60
60
5
10
10
50
0.4
1.60
1.3
2.6
75
100
100
100
50
450
300
50
100
2
8
30
45
300
V
V
V
nA
m
A
nA
V
V
—
—
pF
—
ns
NOTES:
1) Ts = Substrate Temperatue that the chip carrier is mounted on.
2) Derate Linearly 11.4mW/°C above 25°C. This rating is proveded as an aid to designers. It is dependent upon
mounting material and methods and is not measureable as an outgoing test.
3) Pulse Test Pulse Wide
￡
300
m
s , Duty Cycle
￡
2%
SMALL SIGNAL CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N2907 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N2907A | PNP switching transistors |
| 2N2907A | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N2907 | GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
| 2N2907 | PNP SILICON PLANAR TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2907 | 制造商:STMicroelectronics 功能描述:BIPOLAR TRANSISTOR |
| 2N2907/A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:PNP Switching Transistors |
| 2N2907_11 | 制造商:MCC 制造商全稱(chēng):Micro Commercial Components 功能描述:PNP Switching Transistors |
| 2N2907_12 | 制造商:COMSET 制造商全稱(chēng):Comset Semiconductor 功能描述:GENERAL PURPOSE AMPLIFIERS TRANSISTORS |
| 2N29071 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:SWITCHING TRANSISTOR PNP SILICON |
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