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參數(shù)資料
| 型號(hào)： | 2N2907AC3B.GBDM |
| 廠商： | SEMELAB LTD |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BA |
| 封裝： | HERMETIC SEALED PACKAGE-4 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 200K |
| 代理商： | 2N2907AC3B.GBDM |
SILICON PLANAR
EPITAXIAL PNP TRANSISTOR
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8357
Issue 1
Page 1 of 4
2N2907AC3
Low Power, High Speed Saturated Switching
Hermetic Surface Mounted Package.
Ideally suited for High Speed Switching
and General Purpose Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-60V
VCEO
Collector – Emitter Voltage
-60V
VEBO
Emitter – Base Voltage
-5V
IC
Continuous Collector Current
-600mA
PD
Total Power Dissipation at
TA = 25°C
500mW
Derate Above 37.5°C
3.08mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES (Each Device)
Symbols
Parameters
Min.
Typ.
Max.
Units
RθJA
Thermal Resistance, Junction To Ambient
325
°C/W
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| 2N2907AC3B-JQRS.GCDE | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BA |
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| 2N2907AC3C-JQRS.GBDM | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BA |
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