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參數(shù)資料
| 型號： | 2N2907AC3C-JQRS.GBDM |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BA |
| 封裝： | HERMETIC SEALED PACKAGE-4 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 200K |
| 代理商： | 2N2907AC3C-JQRS.GBDM |
SILICON PLANAR
EPITAXIAL PNP TRANSISTOR
2N2907AC3
Semelab Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8357
Issue 1
Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage
IC = -10mA
IB = 0
-60
V
VCB = -60V
IE = 0
-10
A
VCB = -50V
IE = 0
-10
nA
ICBO
Collector Cut-Off Current
TA = 150°C
-10
A
VEB = -5V
IC = 0
-10
A
IEBO
Emitter Cut-Off Current
VEB = -4V
IC = 0
-50
nA
ICES
Collector Cut-Off Current
VCE = -50V
-50
nA
IC = -150mA
IB = -15mA
-0.4
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = -500mA
IB = -50mA
-1.6
IC = -150mA
IB = -15mA
-0.6
-1.3
VBE(sat)
(1)
Base-Emitter Saturation
Voltage
IC = -500mA
IB = -50mA
-2.6
V
IC = -0.1mA
VCE = -10V
75
IC = -1.0mA
VCE = -10V
100
450
IC = -10mA
VCE = -10V
100
TA = -55°C
50
IC = -150mA
VCE = -10V
100
300
hFE
(1)
Forward-current transfer
ratio
IC = -500mA
VCE = -10V
50
DYNAMIC CHARACTERISTICS
IC = -20mA
VCE = -20V
| hfe |
Small signal forward-current
transfer ratio
f = 100MHz
2
IC = -1.0mA
VCE = -10V
hfe
Small Signal Current Gain
f = 1.0KHz
100
VCB = -10V
IE = 0
Cobo
Output Capacitance
f = 1.0MHz
8
VEB = -2V
IC = 0
Cibo
Input Capacitance
f = 1.0MHz
30
pF
IC = -150mA
VCC = -30V
ton
Turn-On Time
IB1 = -15mA
45
IC = -150mA
VCC = -30V
toff
Turn-Off Time
IB1 = - IB2 = -15mA
300
ns
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
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