- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366213 > 2N2907AUA (MICROSEMI CORP-LAWRENCE) PNP SMALL SIGNAL SILICON TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2N2907AUA |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP SMALL SIGNAL SILICON TRANSISTOR |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | 2N2907AUA |
Parameter
OFF CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
hfe
lhfel
C
obo
Open Circuit Output Capacitance
C
ibo
Input Capacitance(output open)
SWITCHING CHARACTERISTICS
Forward Current Transfer Ratio
Forward Curent Transfer Ratio
t
on
t
off
Turn-On Time
Turn-Off Time
I
C
= 1mA
I
C
= 50mA V
CE
= 20V f = 100MHz
V
CB
= 10V 100kHz
￡
f
￡
1MHz
V
EB
= 2V
100kHz
￡
f
￡
1MHz
V
CE
= 10V f = 1kHz
V
CC
= 30V I
C
150mA
V
CC
= 30V I
C
150mA
I
B1
= 15mA
I
B1
= I
B1=
15mA
2N2907AQ–LCC20
Prelim.6/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
I
C
= 10mA
I
C
= 10
m
A
I
E
= 10
m
A
I
E
= 0
I
B
= 0
I
E
= 0
I
C
= 0
V
CB
= 50V
T
A
= 150°C
V
EB
= 3.5V
I
C
= 0
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 500mA
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 150mA
(3)
V
CE
= 10V
I
C
= 500mA
(3)
V
CE
= 10V
I
C
= 10mA
I
B
= 15mA
(3)
I
B
= 50mA
(3)
I
B
= 15mA
(3)
I
C
= 50mA
(3)
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
T
A
= –55°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
I
CBO
Collector – Base Cut-off Current
I
EBO
Emitter Base Cut-off Current
ON CHARACTERISTICS
V
CE(sat)
Collector – Emitter Saturation Voltage
V
BE(sat)
Base – Emitter Saturation Voltage
h
FE
Forwared Current Transfer Ratio
60
60
5
10
10
50
0.4
1.60
1.3
2.6
75
100
100
100
50
450
300
50
100
2
8
30
45
300
V
V
V
nA
m
A
nA
V
V
—
—
pF
—
ns
NOTES:
1) Ts = Substrate Temperatue that the chip carrier is mounted on.
2) Derate Linearly 11.4mW/°C above 25°C. This rating is proveded as an aid to designers. It is dependent upon
mounting material and methods and is not measureable as an outgoing test.
3) Pulse Test Pulse Wide
￡
300
m
s , Duty Cycle
￡
2%
SMALL SIGNAL CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N2907AUB | PNP SMALL SIGNAL SILICON TRANSISTOR |
| 2N2907ADIE | Circular Connector; No. of Contacts:13; Series:LJT06R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:11-35 |
| 2N2907 | SILICON PNP TRANSISTOR |
| 2N2907A | SILICON PNP TRANSISTOR |
| 2N2907AQ-LCC20 | SURFACE MOUNT QUAD PNP TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2907AUAJANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 60V 0.6A 4-Pin UA |
| 2N2907AUATX | 制造商:TT Electronics / OPTEK Technology 功能描述:4 PIN, SMT PNP GENERAL PURPOSE TRANSISTOR 制造商:OPTEK TECHNOLOGY INC 功能描述:4 Pin, SMT PNP general purpose transistor |
| 2N2907AUATXV | 制造商:TT Electronics / OPTEK Technology 功能描述:4 PIN, SMT PNP GENERAL PURPOSE TRANSISTOR 制造商:OPTEK TECHNOLOGY INC 功能描述:4 Pin, SMT PNP general purpose transistor |
| 2N2907AUB | 功能描述:兩極晶體管 - BJT PNP G.P. Transistor 3 Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2907AUB_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。