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參數(shù)資料
| 型號： | 2N2916DCSM |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL NPN PLANAR TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
| 中文描述： | 30 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC2-6 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 28K |
| 代理商： | 2N2916DCSM |
2N2916
2N2918
Parameter
Test Conditions
Min. Typ. Max. Min. Typ. Max.
Unit
—
mV
mV
0.9
1
3
5
0.8
1
0.8
1
5
10
1.6
2
V
CE
= 5V
See Note 2.
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
T
A1
= 25°C
V
CE
= 5V
T
A1
= 25°C
I
C
= 100
m
A
I
C
= 100
m
A
I
C
= 10
m
A to 1mA
I
C
= 100
m
A
T
A2
= –55°C
I
C
= 100
m
A
T
A2
= 125°C
TRANSISTOR MATCHING CHARACTERISTICS
h
FE1
h
FE2
Gain Balance Ratio
Base – Emitter Voltage
Differential
LA B
S E M E
Prelim. 9/95
2N2914
2N2916
2N2918
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
1
Min.
Typ.
Max.
Unit
V
nA
m
A
nA
—
V
W
m
mho
—
pF
45
45
6
10
10
2
2
600
150
30
225
300
0.70
0.35
25
32
1
3
6
V
(BR)CBO
V
(BR)CEO*
V
(BR)EBO
Collector – Base Breakdown Voltage
Collector – Emitter Breakdown Voltage
Emitter – Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
CEO
I
EBO
Collector Cut-off Current
Emitter Cut-off Current
h
FE
DC Current Gain
V
BE
V
CE(sat)
h
ib
Base – Emitter Voltage
Collector – Emitter Saturation Voltage
Small Signal Common – Base
Input Impedance
Small Signal Common – Base
Output Admittance
Small Signal Common – Base
Current Gain
Common – Base Open Circuit
Output Capacitance
* Pulse Test: t
p
= 300
m
s ,
d ￡
1%.
h
ob
|h
fe
|
C
obo
I
C
= 10
m
A
I
C
= 10mA
I
E
= 10
m
A
V
CB
= 45V
I
E
= 0
I
B
= 0
I
C
= 0
I
E
= 0
T
A
= 150°C
I
B
= 0
I
C
= 0
I
C
= 10
m
A
T
A
= –55°C
I
C
= 100
m
A
I
C
= 1mA
I
C
= 100
m
A
I
C
= 1mA
I
C
= 1mA
V
CE
= 5V
V
EB
= 5V
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
I
B
= 100
m
A
V
CB
= 5V
f = 1kHz
V
CB
= 5V
f = 1kHz
V
CE
= 5V
f = 20MHz
V
CB
= 5V
f = 140kHz to 1MHz
I
C
= 1mA
I
C
= 500
m
A
I
E
= 0
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C unless otherwise stated)
INDIVIDUAL TRANSISTOR CHARACTERISTICS
NOTES
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as h
FE1
.
|V
BE1
– V
BE2
|
|
D
(V
BE1
– V
BE2
)
D
T
A
|
Static Forward Current
Base – Emitter Voltage
Differential Change With
Temperature
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N2918 | DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE |
| 2N2914CECC | NPN |
| 2N2916CECC | NPN |
| 2N2918CECC | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2N2914 | DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2917 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Dual Transistors |
| 2N2917CECC | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:NPN |
| 2N2917DCSM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 45V V(BR)CEO | 30MA I(C) | LLCC |
| 2N2918 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:DUAL SILICON NPN TRANSISTOR |
| 2N2918CECC | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:NPN |
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