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參數(shù)資料
| 型號： | 2N2920DCSM |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
| 中文描述： | 50 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC2-6 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2N2920DCSM |
2N2920DCSM
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim.4/98
Parameter
Test Conditions
1
Min.
Typ.
Max.
Unit
V
nA
μ
A
nA
—
V
V
k
—
μ
mho
—
pF
60
60
5
10
10
20
100
150
75
150
150
125
450
450
450
–0.7
–0.7
–0.8
–0.2
–0.25
3
30
150
600
25 x 10
-4
5
60
1
1
5
4
8
V
(BR)CBO
V
(BR)CEO*
V
(BR)EBO
Collector – Base Breakdown Voltage
Collector – Emitter Breakdown Voltage
Emitter – Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
V
BE
Base – Emitter Voltage
V
CE(sat)
Collector – Emitter Saturation Voltage
h
ie
Small Signal Common – Emitter
Input Impedance
Small Signal Common – Emitter
Current Gain
Small Signal Common – Emitter
Reverse Voltage Gain
Small Signal Common – Emitter
Output Admittance
h
fe
h
re
h
oe
|h
fe
|
Small Signal Common – Emitter
Current Gain
C
obo
Common – Base Open Circuit
Output Capacitance
Common – Base Open Circuit
Input Capacitance
C
ibo
I
C
= –10
μ
A
I
C
= –10mA
I
E
= –10
μ
A
V
CB
= –50V
I
E
= 0
I
B
= 0
I
C
= 0
I
E
= 0
T
A
= 150°C
I
C
= 0
V
CE
= 5V
V
CE
= 5V
T
A
= –55°C
V
CE
= –5V
V
CE
= –5V
V
CE
= –5V *
V
CE
= –5V
I
C
= –100
μ
A
I
C
= –1mA
I
C
= –100
μ
A
I
C
= –1mA
V
EB
= –4V
I
C
= 10
μ
A
I
C
= –100
μ
A
I
C
= –500
μ
A
I
C
= –1mA
I
C
= –10mA
I
C
= –100
μ
A
I
B
= –10
μ
A
I
B
= –100
μ
A
I
B
= –10
μ
A
I
B
= –100
μ
A
V
CE
= –10V
I
C
= –1mA
f = 1kHz
V
CE
= –5V
f = 30MHz
V
CE
= –5V
f = 100MHz
V
CB
= –5V
f = 100kHz
V
EB
= –0.5V
f = 100kHz
I
C
= –500
μ
A
I
C
= –1mA
I
E
= 0
I
C
= 0
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C unless otherwise stated)
NOTES
* Pulse Test: t
p
= 300
μ
s,
δ ≤
2%.
1) Terminals not under test are open circuited under all test conditions.
INDIVIDUAL TRANSISTOR CHARACTERISTICS
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