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參數(shù)資料
| 型號： | 2N3404 |
| 廠商： | VISHAY SPRAGUE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, CASE CZ-2, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 370K |
| 代理商： | 2N3404 |
2SD2030, 2SD2031
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SD2030
2SD2031
Unit
Collector to base voltage
V
CBO
160
200
V
Collector to emitter voltage
V
CEO
160
200
V
Emitter to base voltage
V
EBO
55V
Collector current
I
C
100
mA
Collector power dissipation
P
C
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
2SD2030 V
(BR)CBO
160
—
V
I
C = 10 A, IE = 0
2SD2031
200
Collector to emitter
breakdown voltage
2SD2030 V
(BR)CEO
160
—
V
I
C = 1 mA, RBE = ∞
2SD2031
200
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
VI
E = 10 A, IC = 0
Collector cutoff
current
2SD2030 I
CBO
——
10
AV
CB = 140 V, IE = 0
2SD2031
V
CB = 160 V, IE = 0
DC current transfer ratio
h
FE1*
1
60
—
200
V
CE = 5 V, IC = 10 mA
h
FE2
30
—
V
CE = 5 V, IC = 1 mA
Base to emitter voltage
V
BE
—
1.5
V
CE = 5 V, IC = 10 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
0.5
V
I
C = 30 mA, IB = 3 mA
Gain bandwidth product
f
T
—
140
—
MHz
V
CE = 5 V, IC = 10 mA
Collector output capacitance
C
ob
—
3.8
—
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Note:
1. The 2SD2030 and 2SD2031 are grouped by h
FE1 as follows.
Grade
B
C
h
FE1
60 to 120
100 to 200
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3405 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92 NPN50V .5A .56W EBC |
| 2N3409 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 30V V(BR)CEO | 500MA I(C) | TO-99 |
| 2N340A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 85V V(BR)CEO | 150MA I(C) | TO-11 |
| 2N341 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:N-P-N GROWN SILICON TRANSISTORS |
| 2N3410 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 30V V(BR)CEO | 500MA I(C) | TO-99 |
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