參數(shù)資料
型號(hào)： 2N3439CSM4R
廠(chǎng)商： SEMELAB LTD
元件分類(lèi)： 小信號(hào)晶體管
英文描述： HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
中文描述： 1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： HERMETIC SEALED, CERAMIC, LCC3-4
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 16K
代理商： 2N3439CSM4R
Parameter
Collector
–
Emitter Sustaining Voltage
(I
B
= 0)
Collector Cut-off Current
(V
BE
=
–
1.5V)
Collector
–
Base Cut-off Current
(I
E
= 0)
Collector
–
Cut-off Current
(I
B
= 0)
Emitter Cut-off Current (I
C
= 0)
Collector
–
Emitter Saturation Voltage
Base
–
Emitter Saturation Voltage
DC Current Gain
Test Conditions
Min.
350
250
Typ.
Max.
Unit
500
500
20
20
20
50
20
0.5
1.3
40
30
2N3439CSM4R
2N3440CSM4R
Prelim. 11/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Parameter
Transition Frequency
Output Capacitance
Small Signal Current Gain
Test Conditions
I
C
= 10mA
V
CE
= 10V
V
CB
= 10V
I
C
= 5mA
V
CE
= 10V
Min.
15
Typ.
Max.
Unit
MHz
pF
2N3439CSM4R
2N3440CSM4R
2N3439CSM4R
2N3440CSM4R
2N3439CSM4R
2N3440CSM4R
2N3439CSM4R
2N3440CSM4R
V
CB
= 360V
V
CB
= 250V
V
CE
= 300V
V
CE
= 200V
V
EB
= 6V
I
C
= 50mA
I
C
= 50mA
I
C
= 20mA
2N3439CSM4R only
I
C
= 20mA
I
B
= 4mA
I
B
= 4mA
V
CE
= 10V
V
CE
= 10V
ELECTRICAL CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
V
CEO(sus)*
I
CEX*
I
CBO*
I
CEO*
I
EBO*
V
CE(sat)*
V
BE(sat)*
h
FE*
V
m
A
m
A
m
A
m
A
V
—
f
T
C
ob
hfe
f = 5MHz
f = 10MHz
f = 1kHz
10
25
* Pulse test t
p
= 300
m
s ,
d ￡
2%
DYNAMIC CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
I
C
= 50mA
相關(guān)PDF資料
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2N3439CSM4R High Voltage Medium Power NPN Planar Epitaxial Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高電壓、中等功率、高可靠性、NPN外延平面晶體管（陶瓷表貼封裝）)
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