參數(shù)資料
型號: 2N3468L
廠商: SEMICOA CORP
元件分類: 小信號晶體管
英文描述: Si, SMALL SIGNAL TRANSISTOR, TO-5
文件頁數(shù): 2/2頁
文件大?。?/td> 107K
代理商: 2N3468L
Data Sheet No. 2N3468L
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 10 A
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IE = 10 A, pulsed
Collector-Base Cutoff Current
VCB = 30 V
ICBO1
---
100
nA
VCB = 30 V, TA = +150
oC
ICBO2
---
50
A
Collector-Emitter Cutoff Current
VEB = 3.0 V, VCE = 30 V
---
100
V(BR)CEO
50
---
V(BR)EBO
5.0
---
nA
V
Electrical Characteristics
TC = 25
oC unless otherwise specified
V
V(BR)CBO
50
---
ICEX
ON Characteristics
Symbol
Min
Max
Unit
Forward current Transfer Ratio
IC = 150 mA, VCE = 1.0 V (pulse test)
hFE1
25
---
IC = 500 mA, VCE = 1.0 V (pulse test)
hFE2
25
75
---
IC = 1.0 A, VCE = 5 V (pulse test)
hFE3
25
---
IC = 150 mA, VCE = 1.0 V (pulse test), T = -55
oC
hFE4
10
---
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test)
VCE(sat)1
---
0.35
V dc
IC = 500 mA, IB = 50 mA (pulse test)
VCE(sat)2
---
0.6
V dc
IC = 1.0 A, IB = 100 mA (pulse test)
VCE(sat)3
---
1.2
V dc
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test)
VBE(sat)1
---
1.0
V dc
IC = 500 mA, IB = 50 mA (pulse test)
VBE(sat)2
0.8
1.2
V dc
IC = 1.0 A, IB = 100 mA (pulse test)
VBE(sat)3
---
1.6
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Extrapolated Unity Gain Frequency
VCE = 10 V, IC = 50 mA, f = 100 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
CIBO
---
100
pF
COBO
---
25
MHz
ft
150
500
Switching Characteristics
Symbol
Min
Max
Unit
Delay Time
IC = 500 mA, IB1 = 50 mA, VEB = 2 V
Rise Time
IC = 500 mA, IB1 = 50 mA, VEB = 2 V
Storage Time
IC = 500 mA, IB1 = IB2 = 50 mA
Fall Time
IC = 500 mA, IB1 = IB2 = 50 mA
ns
td
---
10
tr
---
30
ns
ts
---
60
ns
tf
---
30
ns
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