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參數(shù)資料
| 型號(hào)： | 2N3498 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Small Signal Transistors |
| 中文描述： | 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 47K |
| 代理商： | 2N3498 |
Data S heet No. 2N3498
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 10 μA
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
C
= 10 μA
Collector-Base Cutoff Current
V
CB
= 50 V
Emitter-Base Cutoff Current
V
EB
= 4 V
Symbol
Min
Max
Unit
I
EBO
---
25
nA
I
CBO
---
50
nA
V
V
(BR)CEO
6.0
---
V
(BR)CEO
100
---
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
(BR)CBO
100
---
V
ON Characteristics
Forward Current Transfer Ratio
I
C
= 100 μA, V
CE
= 10 V (pulsed)
I
C
= 1.0 mA, V
CE
= 10 V (pulsed)
I
C
= 10 mA, V
CE
= 10 V (pulsed)
I
C
= 150 mA, V
CE
= 10 V (pulsed)
I
C
= 500 mA, V
CE
= 10 V (pulsed)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 300 mA, I
B
= 30 mA
Small Signal Characteristics
Short Circuit Forward Current Transfer Ratio
Forward Current Transfer Ratio
I
C
= 10 mA, V
CE
= 10 V, f = 1 kHz
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
V
CE
= 20 V, I
C
= 20 mA, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Noise Figure
V
CE
= 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz
Noise Figure
V
CE
= 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz
Symbol
Min
Max
Unit
h
FE1
h
FE2
h
FE3
h
FE4
h
FE6
20
25
35
40
15
---
---
---
120
---
---
---
---
---
---
V
BE(sat)1
V
BE(sat)3
---
---
0.8
1.4
V dc
V dc
V
CE(sat)1
V
CE(sat)3
Symbol
---
---
Min
0.2
0.6
Max
V dc
V dc
Unit
|h
FE
|
1.5
8.0
---
NF
---
6.0
dB
NF
---
16
dB
AC |h
FE
|
50
300
---
pF
C
IBO
---
80
pF
C
OBO
---
10
Switching Characteristics
Saturated Turn On Switching time to 90%
I
C
= 150 mA, I
B1
= 15 mA, V
EB
= 2 V
Saturated Turn Off Switching time to 10%
I
C
= 150 mA, I
B2
= -I
B1
= 15 mA
Symbol
Min
Max
Unit
t
ON
---
115
ns
1150
ns
t
OFF
---
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PDF描述 |
|---|---|
| 2N3498 | NPN SILICON TRANSISTOR |
| 2N3498L | NPN SILICON TRANSISTOR |
| 2N3497 | Type 2N3498 Geometry 5620 Polarity NPN |
| 2N3498L | Chip Type 2C3501 Geometry 5620 Polarity NPN |
| 2N3499L | Type 2N3499L Geometry 5620 Polarity NPN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3498_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RADIATION HARDENED |
| 2N3498L | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 100V 0.5A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 0.5A 3PIN TO-5 - Bulk |
| 2N3499 | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR TO-39 LAW - Bulk |
| 2N3499_04 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N3499JANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 100V 0.5A 3-Pin TO-39 |
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