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參數(shù)資料
| 型號(hào)： | 2N3499 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | 500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | 2N3499 |
Data S heet No. 2N3499
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 10 μA
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 μA
Collector-Base Cutoff Current
V
CB
= 50 V
Emitter-Base Cutoff Current
V
EB
= 4 V
ON Characteristics
Forward Current Transfer Ratio
I
C
= 100 μA, V
CE
= 10 V (pulsed)
I
C
= 1.0 mA, V
CE
= 10 V (pulsed)
I
C
= 10 mA, V
CE
= 10 V (pulsed)
I
C
= 150 mA, V
CE
= 10 V (pulsed)
I
C
= 300 mA, V
CE
= 10 V (pulsed)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 300 mA, I
B
= 300 mA
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 300 mA, I
B
= 30 mA
Small Signal Characteristics
Short Circuit Forward Current Transfer Ratio
I
C
= 10 mA, V
CE
= 10 V, f = 1 kHz
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
V
CE
= 20 V, I
C
= 20 mA, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
Noise Figure
V
CE
= 10 V, I
C
= 0.5 mA, Rg = 1 kOhm, 1 kHz
Noise Figure
V
CE
= 10 V, I
C
= 0.5 mA, Rg = 1 kOhm, 1 kHz
Symbol
Min
Max
Unit
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
(BR)CBO
100
---
V
V
(BR)CEO
100
---
V
V
V
(BR)EBO
6.0
---
I
CBO
---
50
nA
I
EBO
---
25
nA
Symbol
Min
Max
Unit
h
FE1
h
FE2
h
FE3
h
FE4
h
FE6
35
50
75
100
20
---
---
---
300
---
---
---
---
---
---
V
BE(sat)1
V
BE(sat)3
---
---
0.8
1.4
V dc
V dc
V
CE(sat)1
V
CE(sat)3
Symbol
---
---
Min
0.2
0.6
Max
V dc
V dc
Unit
pF
C
IBO
---
80
pF
C
OBO
---
10
|h
FE
|
1.5
8.0
---
NF
---
16
dB
NF
---
6.0
dB
AC h
FE
75
375
---
Switching Characteristics
Saturated Turn On Switching time to 90%
I
C
= 150 mA, I
B1
= 15 mA, V
EB
= 2 V
Saturated Turn Off Switching time to 10%
I
C
= 150 mA, I
B2
= -I
B1
= 15 mA
Symbol
Min
Max
Unit
t
ON
---
115
ns
1150
ns
t
OFF
---
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