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參數(shù)資料
| 型號(hào)： | 2N3501CSM4 |
| 英文描述： | High Voltage Medium Power NPN Transistor In a Hermetically Sealed Cermic Surface Mount Package For High Reliability Application(高電壓、中等功率、高可靠性、NPN晶體管（陶瓷表貼封裝）) |
| 中文描述： | 高壓中功率NPN晶體管在密封的六窯業(yè)表面貼裝封裝，高可靠性的應(yīng)用（高電壓，中等功率，高可靠性，npn型晶體管（陶瓷表貼封裝）） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 17K |
| 代理商： | 2N3501CSM4 |
2N3501CSM4
Prelim. 12/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Parameter
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
1
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Test Conditions
Min.
Typ.
Max.
Unit
I
C
= 10mA
I
C
= 10
μ
A
I
E
= 10
μ
A
V
CB
= 75V
V
CB
= 75V
I
B
= 0
I
E
= 0
I
C
= 0
I
E
= 0
I
E
= 0
T
A
= 150
°
C
I
C
= 0
V
EB(off)
= 4V
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 150mA
I
C
= 300mA
I
C
= 10mA
I
C
= 50mA
I
C
= 150mA
I
C
= 10mA
I
C
= 50mA
I
C
= 150mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
1
V
CE
= 10V
1
V
CE
= 10V
1
I
B
= 1mA
I
B
= 5mA
I
B
= 15mA
I
B
= 1mA
I
B
= 5mA
I
B
= 15mA
V
CE
= 20V
I
C
= 20mA
f = 100MH
Z
I
E
= 0
f = 1MH
Z
I
C
= 0
f = 1MH
Z
I
C
= 10mA
f = 1KH
Z
I
C
= 10mA
f = 1KH
Z
I
C
= 10mA
f = 1KH
Z
I
C
= 10mA
f = 1KH
Z
V
CB
= 10V
V
EB
= 0.5V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
150
150
6
0.05
50
35
50
75
100
20
300
0.2
0.25
0.4
0.8
0.9
1.2
150
8
80
0.25
1.25
4
375
200
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
μ
A
nA
—
V
V
MH
Z
pF
x10
-4
—
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
h
FE
DC Current Gain
V
CE(SAT)
Collector-Emitter Saturation Voltage
1
V
BE(SAT)
Base-Emitter Saturation Voltage
1
f
T
Current-Gain–Bandwidth Product
2
C
obo
Output Capacitance
C
ibo
Input Capacitance
h
ie
Input Impedance
h
re
Voltage Feedback Ratio
h
fe
Small-Signal Current Gain
h
oe
Output Admittance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3501 | GENERAL PURPOSE TRANSISTOR (NPN SILICON) |
| 2N3501 | Small Signal Transistors |
| 2N3501 | NPN BIPOLAR TRANSISTOR |
| 2N3501L | NPN SILICON TRANSISTOR |
| 2N3501 | Chip Type 2C3501 Geometry 5620 Polarity NPN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3501DCSM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 150V V(BR)CEO | 300MA I(C) | LLCC |
| 2N3501JAN | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin TO-39 |
| 2N3501JANS | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin TO-39 |
| 2N3501JANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin TO-39 |
| 2N3501JANTXV | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin TO-39 |
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