- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369004 > 2N3501L (Semicoa Semiconductor) Type 2N3501L Geometry 5620 Polarity NPN PDF資料下載
參數(shù)資料
| 型號： | 2N3501L |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Type 2N3501L Geometry 5620 Polarity NPN |
| 中文描述： | 類型2N3501L幾何5620極性npn型 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 45K |
| 代理商： | 2N3501L |
Data S heet No. 2N3501L
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 10 μA
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 μA
Collector-Base Cutoff Current
V
CB
= 75 V
Emitter-Base Cutoff Current
V
EB
= 4 V
Symbol
Min
Max
Unit
I
EBO
---
25
nA
I
CBO
---
50
nA
V
V
(BR)EBO
6.0
---
V
(BR)CEO
150
---
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
(BR)CBO
150
---
V
ON Characteristics
Forward Current Transfer Ratio
I
C
= 100 μA, V
CE
= 10 V (pulsed)
I
C
= 1.0 mA, V
CE
= 10 V (pulsed)
I
C
= 10 mA, V
CE
= 10 V (pulsed)
I
C
= 150 mA, V
CE
= 10 V (pulsed)
I
C
= 300 mA, V
CE
= 10 V (pulsed)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 150 mA, I
B
= 15 mA
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 150 mA, I
B
= 15 mA
Small Signal Characteristics
Short Circuit Forward Current Transfer Ratio
I
C
= 10 mA, V
CE
= 10 V, f = 1 kHz
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
V
CE
= 20 V, I
C
= 20 mA, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
Noise Figure
V
CE
= 10 V, I
C
= 0.5 mA, Rg = 1 kOhm, 1 kHz
Noise Figure
V
CE
= 10 V, I
C
= 0.5 mA, Rg = 1 kOhm, 1 kHz
Symbol
Min
Max
Unit
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
35
50
75
100
20
---
---
---
300
---
---
---
---
---
---
V
BE(sat)1
V
BE(sat)2
---
---
0.8
1.2
V dc
V dc
V
CE(sat)1
V
CE(sat)2
Symbol
---
---
Min
0.2
0.4
Max
V dc
V dc
Unit
AC h
FE
75
375
---
NF
---
6.0
dB
NF
---
16
dB
|h
FE
|
1.5
8.0
---
pF
C
IBO
---
80
pF
C
OBO
---
8.0
Switching Characteristics
Saturated Turn On Switching time to 90%
I
C
= 150 mA, I
B1
= 15 mA, V
EB
= 2 V
Saturated Turn Off Switching time to 10%
I
C
= 150 mA, I
B2
= -I
B1
= 15 mA
Symbol
Min
Max
Unit
t
ON
---
115
ns
1150
ns
t
OFF
---
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3501UB | Silicon NPN Transistor |
| 2N3502 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N3502 | PNP Silicon Planar Epitaxial Transistor(PNP外延平面硅晶體管) |
| 2N3503 | PNP Silicon Planar Epitaxial Transistor(PNP外延平面硅晶體管) |
| 2N3504 | PNP Silicon Planar Epitaxial Transistor(PNP外延平面硅晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3501LJANS | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin TO-5 |
| 2N3501TV | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 115V V(BR)CEO | 50MA I(C) | TO-39 |
| 2N3501UB | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin SMD |
| 2N3501UBJANS | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin CSOT-23 |
| 2N3501UBJANSR | 制造商:Microsemi Corporation 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。