參數(shù)資料
型號： 2N3762
廠商： CENTRAL SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Small Signal Transistors
中文描述： 1500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
封裝： TO-39, 3 PIN
文件頁數(shù)： 2/2頁
文件大?。?/td> 86K
代理商： 2N3762
Data S heet No. 2N3762
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 10 μA
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 μA
Collector-Emitter Cutoff Current
V
EB
= 2.0 V, V
CE
= 20 V
Collector-Emitter Cutoff Current
V
EB
= 2.0 V, V
CE
= 20 V, T
A
= 150
o
C
Collector-Base Cutoff Current
V
CB
= 20 V
Emitter-Base Cutoff Current
V
EB
= 2.0 V
Symbol
Min
Max
Unit
I
EBO
---
200
nA
I
CBO1
---
100
nA
I
CEX2
---
150
μA
nA
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
V
(BR)CBO
40
---
I
CEX1
---
100
V
(BR)CEO
40
---
V
(BR)EBO
5.0
---
ON Characteristics
Forward current Transfer Ratio
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 150 mA, V
CE
= 1.0 V (pulse test)
I
C
= 500 mA, V
CE
= 1.0 V (pulse test)
I
C
= 1.0 A, V
CE
= 1.5 V (pulse test)
I
C
= 1.5 A, V
CE
= 5.0 V (pulse test)
I
C
= 5 mA, V
CE
= 1.0 V (pulsed), T
A
= -55
o
C
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1 mA (pulse test)
I
C
= 150 mA, I
C
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
I
C
= 1.0 A, I
C
= 100 mA (pulse test)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1 mA
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
Small Signal Characteristics
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
I
C
= 50 mA, V
CE
= 10 V, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
Switching Characteristics
Per Figure 1, MIL-S-19500/396D
Symbol
Min
Max
Unit
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
35
40
40
30
30
20
---
---
140
120
---
---
---
---
---
---
---
---
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
CE(sat)4
---
---
---
---
0.1
0.22
0.50
0.90
V dc
V dc
V dc
V dc
V
BE(sat)1
V
BE(sat)2
V
BE(sat)3
V
BE(sat)4
Symbol
---
---
---
---
0.8
1.0
1.2
1.4
Max
V dc
V dc
V dc
V dc
Unit
Min
C
IBO
---
80
pF
pF
C
OBO
---
25
---
|h
FE
|
1.8
6.0
Pulse Delay Time
t
d
---
8
ns
Pulse Rise Time
t
r
---
35
ns
Pulse Storage Time
t
s
---
80
ns
Pulse Fall Time
t
f
---
35
ns
Symbol
Min
Max
Unit
相關PDF資料
PDF描述
2N3762 PNP SWITCHING SILICON TRANSISTOR
2N3762L PNP SWITCHING SILICON TRANSISTOR
2N3763L Type 2N3763L Geometry 6706 Polarity PNP
2N3763 Type 2N3763 Geometry 6706 Polarity PNP
2N3763 Small Signal Transistors
相關代理商/技術參數(shù)
參數(shù)描述
2N3762L 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 40V 1.5A 3PIN TO-5 - Bulk
2N3763 功能描述:兩極晶體管 - BJT Small Signal RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N3763L 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 1.5A 3PIN TO-5 - Bulk
2N3764 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 40V 1.5A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 40V 1.5A 3PIN TO-46 - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 40V 1.5A 3-Pin TO-46
2N3765 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 1.5A 3PIN TO-46 - Bulk
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