參數資料
型號： 2N3763
廠商： Semicoa Semiconductor
英文描述： Type 2N3763 Geometry 6706 Polarity PNP
中文描述： 類型2N3763幾何6706極性進步黨
文件頁數： 2/2頁
文件大?。?/td> 79K
代理商： 2N3763
Data S heet No. 2N3763
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 10 μA
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 μA
Collector-Emitter Cutoff Current
V
EB
= 2.0 V, V
CE
= 30 V
Collector-Emitter Cutoff Current
V
EB
= 2.0 V, V
CE
= 30 V, T
A
= 150
o
C
Collector-Base Cutoff Current
V
CB
= 30 V
Emitter-Base Cutoff Current
V
EB
= 2.0 V
Symbol
Min
Max
Unit
---
100
V
(BR)CEO
60
---
V
(BR)EBO
5.0
---
nA
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
V
(BR)CBO
60
---
I
CEX1
I
CEX2
---
150
μA
I
CBO
---
100
nA
I
EBO
---
200
nA
ON Characteristics
Forward current Transfer Ratio
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 150 mA, V
CE
= 1.0 V (pulse test)
I
C
= 500 mA, V
CE
= 1.0 V (pulse test)
I
C
= 1.0 A, V
CE
= 1.5 V (pulse test)
I
C
= 1.5 A, V
CE
= 5.0 V (pulse test)
I
C
= 500 mA, V
CE
= 1.0 V (pulsed), T
A
= -55
o
C
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1 mA (pulse test)
I
C
= 150 mA, I
C
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
I
C
= 1.0 A, I
C
= 100 mA (pulse test)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1 mA
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
Small Signal Characteristics
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
I
C
= 50 mA, V
CE
= 10 V, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
Switching Characteristics
Per Figure 1, MIL-S-19500/396D
Symbol
Min
Max
Unit
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
35
40
40
30
30
20
---
---
140
120
---
---
---
---
---
---
---
---
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
CE(sat)4
---
---
---
---
0.1
0.22
0.50
0.90
V dc
V dc
V dc
V dc
V
BE(sat)1
V
BE(sat)2
V
BE(sat)3
V
BE(sat)4
Symbol
---
---
---
---
0.8
1.0
1.2
1.4
Max
V dc
V dc
V dc
V dc
Unit
Min
---
|h
FE
|
1.5
6.0
pF
C
OBO
---
25
C
IBO
---
80
pF
Pulse Delay Time
t
d
---
8
ns
Pulse Rise Time
t
r
---
35
ns
Pulse Storage Time
t
s
---
80
ns
Pulse Fall Time
t
f
---
35
ns
Symbol
Min
Max
Unit
相關PDF資料
PDF描述
2N3763 Small Signal Transistors
2N3763 PNP SWITCHING SILICON TRANSISTOR
2N3763L PNP SWITCHING SILICON TRANSISTOR
2N3764 Type 2N3764 Geometry 6706 Polarity PNP
2N3764 Small Signal Transistors
相關代理商/技術參數
參數描述
2N3763L 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 1.5A 3PIN TO-5 - Bulk
2N3764 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 40V 1.5A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 40V 1.5A 3PIN TO-46 - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 40V 1.5A 3-Pin TO-46
2N3765 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 1.5A 3PIN TO-46 - Bulk
2N3766 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 60V 4A 3-Pin(2+Tab) TO-66 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 4A 3PIN TO-66 - Bulk 制造商:Microsemi 功能描述:Trans GP BJT NPN 60V 4A 3-Pin(2+Tab) TO-66
2N3766JANTX 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 60V 4A 3-Pin(2+Tab) TO-66
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