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參數(shù)資料
| 型號： | 2N3792 |
| 英文描述： | PNP Silicon Epitaxial Base Power Transistor(PNP 硅外延功率型晶體管) |
| 中文描述： | 進步黨硅外延基地功率晶體管（民進黨硅外延功率型晶體管） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 15K |
| 代理商： | 2N3792 |
Parameter
Collector - Emitter Sustaining
Voltage
Collector - Emitter Saturation
Voltage
Test Conditions
Min.
Typ.
Max.
Unit
V
V
mA
mA
—
MHz
-80
-1
1.8
4
-5
-1
-5
150
120
50
30
5
4
V
CEO(sus)*
V
CE(sat)*
V
BE(on)*
I
EBO
I
CEX
h
FE*
f
t
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk2N3792
06/00
I
C
= 200mA
I
B
= 0
I
C
= 5A
I
B
= 0.5V
I
C
= 5A
I
C
= 10A
I
C
= 0
V
BE
= 1.5V
V
CC
= 2V
V
CC
= 4V
V
EB
=7V
V
CE
= 80
T
c
= 150
°
C
V
CE
= 2V
V
CE
= 2V
V
CE
= 4V
V
CE
= 10V
I
C
= 1A
I
C
= 3A
I
C
= 10A
I
C
= 0.5A
f =1.MHz
Base Emitter Voltage
Emmiter Cut-off Current
Collector Cut-off Current
DC Current Gain
Transition Frequency
ELECTRICAL CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
* Pulsed duration = 300
m
s, duty cycle = 1.5%
相關PDF資料 |
PDF描述 |
|---|---|
| 2N3792 | SILICON PNP POWER TRANSISTORS |
| 2N3792 | PNP HIGH POWER SILICON TRANSISTOR |
| 2N3792 | POWER TRANSISTORS(10A,150W) |
| 2N3798 | Chip Type 2C2605 Geometry 0220 Polarity NPN |
| 2N2604 | Small Signal Transistors |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3792 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N3792_02 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:PNP SILICON EPITAXIAL BASE POWER TANSISTORS |
| 2N3792CECC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
| 2N3792JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N3792SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed |
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