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參數(shù)資料
| 型號： | 2N3799 |
| 英文描述： | PNP,Low Noise Amplifier Transistor(低噪聲、放大器型PNP晶體管) |
| 中文描述： | 進步黨，晶體管的低噪聲放大器（低噪聲，放大器型進步黨晶體管） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 27K |
| 代理商： | 2N3799 |
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukPrelim. 4/95
LA B
S E M E
2N3799
Parameter
Current Gain Bandwidth
Product
1
Output Capacitance
Input Capacitance
Input Impedance
Output Admittance
Voltage Feedback Ratio
Small Signal Current Gain
Test Conditions
I
C
= –500
m
A
I
C
= –1mA
I
E
= 0
I
C
= 0
Min.
30
100
Typ.
Max.
Unit
f
t
C
ob
C
ib
h
ie
h
oe
h
re
h
fe
N
F
Noise Figure
500
4
8
40
60
25
900
4
10
5
300
2.5
0.8
1.5
1.8
1.5
1.5
2.5
V
CE
= –5V
V
CE
= –5V
V
CB
= –5V
V
EB
= –0.5V
f = 20MHz
f = 100MHz
f = 1MHz
f = 1MHz
V
CE
= –10V
I
C
= –1mA
f = 1kHz
f = 100Hz
B.W. = 20Hz
f = 1kHz
B.W. = 200Hz
f = 10kHz
B.W. = 2kHz
f = 1kHz
Spot:
Noise:
V
CE
= –10V
I
C
= –100
m
A
R
G
= 3k
W
MHz
pF
k
W
m
hmos
x 10
-4
—
dB
SMALL SIGNAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
Parameter
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Test Conditions
I
C
= –10mA
I
C
= –10
m
A
I
E
= –10
m
A
V
CB
= –50V
I
E
= 0
V
EB
= –4V
I
C
= –100
m
A
I
C
= –1mA
I
C
= –100
m
A
I
C
= –1mA
I
C
= –100
m
A
I
C
= –1
m
A
I
C
= –10
m
A
I
C
= –100
m
A
I
C
= –100
m
A
I
C
= –500
m
A
I
C
= –1mA
I
C
= –10mA *
Min.
–60
–60
–5
Typ.
Max.
Unit
–0.01
–10
–20
–0.2
–0.25
–0.7
–0.8
–0.7
75
225
300
150
300
300
250
I
B
= 0
I
E
= 0
I
C
= 0
T
A
= 150°C
I
C
= 0
I
B
= –10
m
A
I
B
= –100
m
A
I
B
= –10
m
A
I
B
= –100
m
A
V
CE
= –5V
T
A
= –55°C
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
V
CE(sat)
Collector – Emitter Saturation Voltage
V
BE(sat)
Base – Emitter Saturation Voltage
V
BE(on)
Base – Emitter On Voltage
h
FE
DC Current Gain
(V
CE
= –5V)
V
m
A
nA
V
V
V
—
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
* Pulse Test: t
p
￡
300
m
s,
d ￡
2%.
1) f
t
is defined as the frequency at which |h
fe
| extrapolates to untity.
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PDF描述 |
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| 2N3799 | Chip Type 2C2605 Geometry 0220 Polarity NPN |
| 2N3866A | Type 2N3866A Geometry 1007 Polarity NPN |
| 2N3866UB | Silicon NPN Transistor |
| 2N3866 | Chip Type 2C3866A Geometry 1007 Polarity NPN |
| 2N3866AUB | Chip Type 2C3866A Geometry 1007 Polarity NPN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3799A | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:PNP SILICON ANNULAR TRANSISTORS |
| 2N3799X | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:PNP, LOW NOISE AMPLIFIER TRANSISTOR |
| 2N3799X_09 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| 2N380 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 5A I(C) | TO-3 |
| 2N3800DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Dual Bipolar PNP Devices in a hermetically sealed |
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