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參數(shù)資料
| 型號： | 2N3822 |
| 廠商： | InterFET Corporation |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | surface mount silicon Zener diodes |
| 中文描述： | 硅表面貼裝齊納二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 2N3822 |
TECHNICAL DATA
N-CHANNEL J -FET DEPLETION MODE
Qualified per MIL-PRF-19500/ 375
Devices
Qualified Level
2N3821
2N3822
2N3823
JANTX
JANTXV
MAXIMUM RATINGS
Parameters / Test Conditions
Gate-Source Voltage
Drain-Source Voltage
Drain-Gate Voltage
Gate Current
Power Dissipation
Operating Junction & Storage Temperature Range
(1) Derate linearly 1.7 mW/
0
C for T
A
+25
Symbol
V
GSR
V
DS
V
DG
I
GF
P
T
T
j
, T
stg
2N3821
2N3822
50
50
50
2N3823
30
30
30
10
300
-55 to +200
Unit
V
V
V
mA
mW
0
C
T
A
= +25
0
C
(1)
0
C.
TO-72*
(TO-206AF)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Parameters / Test Conditions
Gate-Source Breakdown Voltage
DS
= 0, I
G
= 1.0
μ
Adc
Gate Reverse Current
V
DS
= 0, V
GS
= 30 Vdc
V
DS
= 0, V
GS
= 20 Vdc
Zero-Gate-Voltage Drain Current
V
GS
= 0, V
DS
= 15 Vdc
Gate-Source Voltage
V
DS
= 15 Vdc, I
D
= 50 μAdc
V
DS
= 15 Vdc, I
D
= 200 μAdc
V
DS
= 15 Vdc, I
D
= 400 μAdc
Gate-Source Cutoff Voltage
V
DS
= 15 Vdc, I
D
= 0.5
η
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
V
(BR)GSSR
Min.
50
30
Max.
Units
Vdc
2N3821, 2N3822
2N3823
2N3821, 2N3822
2N3823
I
GSSR
0.1
0.5
2.5
10
20
2.0
4.0
7.5
4.0
6.0
8.0
η
A
2N3821
2N3822
2N3823
I
DSS
0.5
2.0
4.0
0.5
1.0
1.0
mA
2N3821
2N3822
2N3823
V
GS
Vdc
2N3821
2N3822
2N3823
V
GS(off)
Vdc
120101
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3822UB | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL J-FET DEPLETION MODE |
| 2N3823 | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET TO-72 LAW - Bulk 制造商:Motorola Inc 功能描述: |
| 2N3823UB | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL J-FET DEPLETION MODE |
| 2N3824 | 制造商:n/a 功能描述:_ |
| 2N3824LP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 50V V(BR)DSS | TO-46 |
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