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參數(shù)資料
| 型號： | 2N3867SMD05 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-276AA |
| 封裝： | HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 337K |
| 代理商： | 2N3867SMD05 |
PNP SWITCHING SILICON
TRANSISTOR
2N3867SMD05
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 7960
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
V(BR)CEO
(3)
Collector-Emitter
Breakdown Voltage
IC = 20mA
IB = 0
40
V
VCE = 40V
VEB = 2V
1.0
ICEX
Collector Cut-Off Current
TA = 150°C
50
A
ICBO
Collector Cut-Off Current
VCB = 40V
IE = 0
100
IEBO
Emitter Cut-Off Current
VEB = 4V
IC = 0
100
A
IC = 500mA
VCE = 1.0V
50
TA = -55°C
25
IC = 1.5A
VCE = 2V
40
200
IC = 2.5A
VCE = 3V
25
hFE
(3)
Forward-current transfer
ratio
IC = 3A
VCE = 5V
20
-
IC = 500mA
IB = 50mA
0.5
IC = 1.5A
IB = 150mA
0.75
VCE(sat)
(3)
Collector-Emitter Saturation
Voltage
IC = 2.5A
IB = 250mA
1.5
IC = 500mA
IB = 50mA
1.0
IC = 1.5A
IB = 150mA
0.9
1.4
VBE(sat)
(3)
Base-Emitter Saturation
Voltage
IC = 2.5
IB = 250mA
2
V
DYNAMIC CHARACTERISTICS
IC = 100mA
VCE = 5
hfe
Magnitude of common-
emitter small-signal short-
circuit forward-current
transfer ratio
f = 20MHz
3
12
Cobo
Output Capacitance
VCB = 10V
IE = 0
f = 1 MHz
120
Cibo
Input Capacitance
VEB = 3V
IC = 0
f = 1 MHz
800
pF
td
Delay Time
VCC = -30V
VEB = 0V
35
tr
Rise Time
IC = 1.5A ,IB1 = 150mA
65
ts
Storage Time
VCC = -30V
VEB = 0V
500
tf
Fall Time
IC = 1.5A ,IB1 = IB2 = 150mA
100
ns
Notes
(1)
Derate Linearly 200mW/
°C for TC > 25°C
(2)
Derate Linearly 5.7mW/
°C for TA > 25°C
(3)
Pulse Width ≤ 300us, δ ≤ 2%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3868 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 3A 3PIN TO-5 - Bulk 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR, PNP, 80V, 1A, TO-205AD-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:7W; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Min:-65C; No. of Pins:3 |
| 2N3868JAN | 制造商:n/a 功能描述:2N3868JAN |
| 2N3868JANTX | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 3A 3-Pin TO-5 |
| 2N3868JANTXV | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 3A 3-Pin TO-5 制造商:Microsemi 功能描述:Trans GP BJT PNP 60V 3A 3-Pin TO-5 |
| 2N3868JTX84 | 制造商:n/a 功能描述:2N3868JTX |
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