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參數(shù)資料
| 型號(hào)： | 2N3879 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 75 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 封裝： | TO-66, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 58K |
| 代理商： | 2N3879 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/526
Devices
Qualified Level
2N3879
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
75
Vdc
Collector-Base Voltage
VCBO
120
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Base Current
IB
5.0
Adc
Collector Current
IC
7.0
Adc
Total Power Dissipation
@ TC = 25
0C (1)
PT
35
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
5.0
0C/W
1) Derate linearly 200 mW/
0C for TC > 250C
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
V(BR)CEO
75
Vdc
Collector-Emitter Cutoff Current
VCE = 50 Vdc
ICEO
5.0
Vdc
Collector-Emitter Cutoff Current
VCE = 100 Vdc, VBE = 1.5 Vdc
ICEX
4.0
mAdc
Collector-Base Cutoff Current
VCB = 120 Vdc
ICBO
25
mAdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
IEBO
10
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
TO-66*
(TO-213AA)
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