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參數(shù)資料
| 型號： | 2N3904 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 封裝： | PLASTIC, TO-92, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 35K |
| 代理商： | 2N3904 |
2N3904
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88113
2
07-May-02
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 10
A, IE = 0
60
——
V
Collector-Emitter Breakdown Voltage(1)
V(BR)CEO
IC = 1 mA, IB = 0
40
——
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 10
A, IC = 0
6
——
V
Collector Saturation Voltage
VCEsat
IC = 10 mA, IB = 1 mA
——
0.2
V
IC = 50 mA, IB = 5 mA
——
0.3
Base Saturation Voltage
VBEsat
IC = 10 mA, IB = 1 mA
——
0.85
V
IC = 50 mA, IB = 5 mA
——
0.95
Collector-Emitter Cutoff Current
ICEV
VEB = 3 V, VCE = 30 V
——
50
nA
Emitter-Base Cutoff Current
IEBV
VEB = 3 V, VCE = 30 V
——
50
nA
VCE = 1 V, IC = 0.1 mA
40
——
VCE = 1 V, IC = 1 mA
70
——
DC Current Gain
hFE
VCE = 1 V, IC = 10 mA
100
300
——
VCE = 1 V, IC = 50 mA
60
——
VCE = 1 V, IC = 100 mA
30
——
Input Impedance
hie
VCE = 10 V, IC = 1 mA
1
—
10
k
f = 1 kHz
Voltage Feedback Ratio
hre
VCE = 10 V, IC = 1 mA
0.5 10-4
—
8 10-4
—
f = 1 kHz
Gain-Bandwidth Product
fT
VCE = 20 V, IC = 10 mA
300
——
MHz
f = 100 MHz
Collector-Base Capacitance
CCBO
VCB = 5 V, f = 100 kHz
——
4pF
Emitter-Base Capacitance
CEBO
VCB = 0.5 V, f = 100 kHz
——
8pF
Small Signal Current Gain
hfe
VCE = 10 V, IC = 1 mA,
100
—
400
—
f = 1 kHz
Output Admittance
hoe
VCE = 1 V, IC = 1 mA,
1
—
40
S
f = 1 kHz
Noise Figure
NF
VCE = 5 V, IC = 100
A,
——
5dB
RG =1 k
, f = 10...15000 kHz
Delay Time (see fig. 1)
td
IB1 = 1 mA, IC = 10 mA
——
35
ns
Rise Time (see fig. 1)
tr
IB1 = 1 mA, IC = 10 mA
——
35
ns
Storage Time (see fig. 2)
ts
–IB1 = IB2 = 1 mA
——
200
ns
IC = 10 mA
Fall Time (see fig. 2)
tf
–IB1 = IB2 = 1 mA
——
50
ns
IC = 10 mA
Fig. 1: Test circuit for delay and rise time
* total shunt capacitance of test jig and
connectors
Fig. 2: Test circuit for storage and fall time
* total shunt capacitance of test jig and
connectors
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| 2N3904,116 | 功能描述:TRANS NPN SW HS 200MA 40V TO92 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2N3904,412 | 功能描述:兩極晶體管 - BJT TRANS SW BULK STR LEAD RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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