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參數(shù)資料
| 型號： | 2N3904CSM |
| 英文描述： | General Purpose NPN Transistor In a Hermetic Surface Mount Package For High Reliability Application(通用NPN晶體管（高可靠性、表貼型封裝）) |
| 中文描述： | 通用NPN晶體管在一個全封閉表面貼裝封裝，高可靠性的應(yīng)用（通用npn型晶體管（高可靠性，表貼型封裝）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | 2N3904CSM |
2N3904CSM
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/95
LAB
SEME
Parameter
Test Conditions
V
CE
= 20V
f = 100MHz
V
CB
= 5V
f = 1MHz
V
BE
= 0.5V
f = 1MHz
Min.
Typ.
Max.
Unit
Parameter
Delay Time
Rise Time
Storage Time
Fall Time
Test Conditions
V
CC
= 3V
I
C
= 10mA
V
CC
= 3V
I
B1
= I
B2
= 1mA
Min.
Typ.
Max.
35
35
200
50
Unit
t
d
t
r
t
s
t
f
f
t
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
h
ie
h
oe
h
re
h
fe
Input Impedance
Output Admittance
Voltage Feedback Ratio
Small Signal Current Gain
N
F
Noise Figure
300
4
8
1
1
10
40
8
400
0.5
100
5
Parameter
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Emitter Cut-off Current
Test Conditions
I
C
= 1mA
I
C
= 10
μ
A
I
E
= 10
μ
A
V
CE
= 30V
I
C
= 10mA
I
C
= 50mA
I
C
= 10mA
I
C
= 50mA
Min.
40
60
6
Typ.
Max.
Unit
* Pulse Test: t
p
≤
300
μ
s,
δ ≤
2%.
50
0.2
0.3
0.85
0.95
0.65
40
70
100
60
30
300
I
B
= 0
I
E
= 0
I
C
= 0
V
EB
= 3V
I
B
= 1mA
I
B
= 5mA
I
B
= 1mA
I
B
= 5mA
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 50mA
I
C
= 100mA
V
CE
= 1V
V
(BR)CEO*
V
(BR)CBO
V
(BR)EBO
I
CEX
V
CE(sat)
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
V
nA
V
V
—
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
I
C
= 10mA
I
E
= 0
I
C
= 0
V
CE
= 10V
I
C
= 1mA
f = 1kHz
V
CE
= 5V
f = 1kHz
I
C
= 100
μ
A
R
S
= 1k
V
BE
= 0.5V
I
B1
= 1mA
V
BE
= 0.5V
MHz
pF
pF
k
μ
hmos
x 10
-4
—
dB
ns
SMALL SIGNAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
SWITCHING CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3904C | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
| 2N3904L-T92-B | NPN GENERAL PURPOSE AMPLIFIER |
| 2N3904L-T92-K | NPN GENERAL PURPOSE AMPLIFIER |
| 2N3904-T92-B | NPN GENERAL PURPOSE AMPLIFIER |
| 2N3904-T92-K | NPN GENERAL PURPOSE AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3904CTA | 功能描述:兩極晶體管 - BJT NPN Trans Gen Purp Collector=Middle Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3904DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON EPITAXIAL DUAL NPN TRANSISTORS |
| 2N3904E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR |
| 2N3904G | 功能描述:兩極晶體管 - BJT 200mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3904G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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