參數(shù)資料
型號(hào)： 2N3904D27Z
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： TO-92, 3 PIN
文件頁(yè)數(shù)： 10/17頁(yè)
文件大?。?/td> 893K
代理商： 2N3904D27Z
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown
Voltage
IC = 1.0 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, IC = 0
6.0
V
IBL
Base Cutoff Current
VCE = 30 V, VEB = 3V
50
nA
ICEX
Collector Cutoff Current
VCE = 30 V, VEB = 3V
50
nA
OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
Spice Model
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
300
MHz
Cobo
Output Capacitance
VCB = 5.0 V, IE = 0,
f = 1.0 MHz
4.0
pF
Cibo
Input Capacitance
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
8.0
pF
NF
Noise Figure
IC = 100
A, VCE = 5.0 V,
RS =1.0k
,f=10 Hz to 15.7kHz
5.0
dB
td
Delay Time
VCC = 3.0 V, VBE = 0.5 V,
35
ns
tr
Rise Time
IC = 10 mA, IB1 = 1.0 mA
35
ns
ts
Storage Time
VCC = 3.0 V, IC = 10mA
200
ns
tf
Fall Time
IB1 = IB2 = 1.0 mA
50
ns
hFE
DC Current Gain
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
40
70
100
60
30
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.2
0.3
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.65
0.85
0.95
V
2N3904
/
MMBT3904
/
PZT3904
NPN General Purpose Amplifier
(continued)
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N3904DCSM 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON EPITAXIAL DUAL NPN TRANSISTORS
2N3904E 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR
2N3904G 功能描述:兩極晶體管 - BJT 200mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N3904G 制造商:ON Semiconductor 功能描述:Bipolar Transistor
2N3904G-T92-B 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER
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