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參數(shù)資料
| 型號(hào)： | 2N3904ZL1 |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | General Purpose Transistors(NPN Silicon) |
| 中文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 16K |
| 代理商： | 2N3904ZL1 |
2N3904
Prelim. 7/00
LA B
S E M E
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukParameter
Test Conditions
V
CE
= 20V
f = 100MHz
V
CB
= 5V
f = 1MHz
V
BE
= 0.5V
f = 1MHz
Min.
Typ.
Max.
Unit
Parameter
Delay Time
Rise Time
Storage Time
Fall Time
Test Conditions
V
CC
= 3V
I
C
= 10mA
V
CC
= 3V
I
B1
= I
B2
= 1mA
Min.
Typ.
Max.
35
35
200
50
Unit
t
d
t
r
t
s
t
f
f
t
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
h
ie
h
oe
h
re
h
fe
Input Impedance
Output Admittance
Voltage Feedback Ratio
Small Signal Current Gain
N
F
Noise Figure
300
4
8
1
1
10
40
8
400
0.5
100
5
Parameter
Collector
–
Emitter Breakdown Voltage
Collector
–
Base Breakdown Voltage
Emitter
–
Base Breakdown Voltage
Base Cut-off Current
Collector
–
Emitter Cut-off Current
Test Conditions
I
C
= 1mA
I
C
= 10
m
A
I
E
= 10
m
A
V
CE
= 30V
V
EB
= 3V
I
C
= 10mA
I
C
= 50mA
I
C
= 10mA
I
C
= 50mA
Min.
40
60
6
Typ.
Max.
Unit
* Pulse Test: t
p
￡
300
m
s,
d ￡
2%.
50
50
0.2
0.3
0.85
0.95
0.65
40
70
100
60
30
300
I
B
= 0
I
E
= 0
I
C
= 0
I
B
= 1mA
I
B
= 5mA
I
B
= 1mA
I
B
= 5mA
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 50mA
I
C
= 100mA
V
CE
= 1V
V
(BR)CEO*
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
V
CE(sat)
Collector
–
Emitter Saturation Voltage
V
BE(sat)*
Base
–
Emitter Saturation Voltage
h
FE*
DC Current Gain
V
nA
V
V
—
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise stated)
I
C
= 10mA
I
E
= 0
I
C
= 0
V
CE
= 10V
I
C
= 1mA
f = 1kHz
V
CE
= 5V
f = 1kHz
I
C
= 100
m
A
R
S
= 1k
W
V
BE
= 0.5V
I
B1
= 1mA
V
BE
= 0.5V
MHz
pF
pF
k
W
m
hmos
x 10
-4
—
dB
ns
SMALL SIGNAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise stated)
SWITCHING CHARACTERISTICS
(T
A
= 25
°
C unless otherwise stated)
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| 2N3904ZL1G | 功能描述:兩極晶體管 - BJT 200mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3905 | 功能描述:兩極晶體管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3905/D | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:General Purpose Transistors PNP |
| 2N3905_01 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:PNP General Purpose Amplifier |
| 2N3905_D26Z | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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