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參數(shù)資料
| 型號： | 2N3906 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 5/5頁 |
| 文件大小： | 60K |
| 代理商： | 2N3906 |
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2N3906
5/5
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| 2N3960 | 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3906 GE84-87 | 制造商:GE 功能描述:2N3906 |
| 2N3906 N | 制造商:N 功能描述:2N3906 |
| 2N3906 PBFREE | 制造商:Central Semiconductor Corp 功能描述: |
| 2N3906(TE2,T) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 40V 0.2A 3-Pin TO-92 T/R |
| 2N3906,116 | 功能描述:TRANS PNP SW HS 200MA 40V TO92 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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