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參數(shù)資料
| 型號(hào)： | 2N3958 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-50V，最大柵極工作電流-50pA的雙N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | 單片雙N溝道場(chǎng)效應(yīng)（最小柵源擊穿電壓- 50V的最大柵極工作電流，50pA的的雙?溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | 2N3958 |
2N3958
Siliconix
P-37995—Rev. A, 11-Aug-94
3
Typical Characteristics
5
0
–5
–4
–3
–2
–1
4
2
1
0
0
30
20
10
40
50
3
2.6
2.2
1
3
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
V
GS(off)
– Gate-Source Cutoff Voltage (V)
V
DG
– Drain-Gate Voltage (V)
–
I
D
g
f
–
I
G
0.1 pA
10 pA
1 pA
I
DSS
@ V
DS
= 15 V, V
GS
= 0 V
g
fs
@ V
DG
= 15 V, V
GS
= 0 V
f = 1 kHz
g
fs
I
DSS
I
GSS
@ 125 C
I
GSS
@ 25 C
T
A
= 125 C
T
A
= 25 C
200 A
100 pA
1 nA
10 nA
100 nA
5
0
12
16
8
4
20
4
3
2
1
0
Output Characteristics
Output Characteristics
V
DS
– Drain-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
–
I
D
–
I
D
–0.2 V
–0.4 V
–0.6 V
–0.3 V
–0.8 V
–1.0 V
–1.2 V
–1.4 V
V
GS(off)
= –2 V
V
GS
= 0 V
5
4
3
2
1
0
V
GS
= 0 V
V
GS(off)
= –3 V
2
0
0.6
0.8
0.4
0.2
1
1.6
1.2
0.8
0.4
0
Output Characteristics
Output Characteristics
V
DS
– Drain-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
–
I
D
–
I
D
V
GS(off)
= –2 V
V
GS
= 0 V
2.5
2.0
1.5
1.0
0.5
0
0
0.6
0.8
0.4
0.2
1
V
GS
= 0 V
V
GS(off)
= –3 V
–0.3 V
–0.9 V
–0.6 V
–2.1 V
–1.5 V
–1.2 V
–2.4 V
–1.8 V
1.8
1.4
I
G
@ I
D
= 200 A
50 A
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
–1.4 V
–1.6 V
0
12
16
8
4
20
50 A
–0.9 V
–0.6 V
–2.1 V
–1.5 V
–1.2 V
–1.8 V
–2.4 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3958_PDIP | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a Low Noise, Low Drift, Monolithic Dual N-Channel JFET |
| 2N3958_SOIC | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a Low Noise, Low Drift, Monolithic Dual N-Channel JFET |
| 2N3958_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a Low Noise, Low Drift, Monolithic Dual N-Channel JFET |
| 2N3958_TO-78 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a Low Noise, Low Drift, Monolithic Dual N-Channel JFET |
| 2N3958-E3 | 功能描述:JFET Dual 50V 0.05 RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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